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SZ1SMB60AT3G

Onsemi

SZ1SMB60AT3G by Onsemi

SZ1SMB60AT3G by Onsemi is a Zener diode with 600W peak power dissipation, 70.2V breakdown voltage, and 96.8V clamping voltage. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

Median Price

$0.491

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,308 parts In-Stock

1+ parts

$0.820

100+ parts

$0.329

1k+ parts

$0.229

10k+ parts

$0.165

2,308

$0.820

$0.329

$0.229

$0.165

TTI

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.162

10,000

-

-

-

$0.162

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

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870

$0.203

-

-

-

Digiode

USA . 1,674 parts In-Stock

1+ parts

$0.494

100+ parts

-

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1,674

$0.494

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Vyrian

USA . 3,987 parts In-Stock

1+ parts

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3,987

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 313 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

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10k+ parts

-

313

$0.199

-

-

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Continental Prestige Electronics

USA . 3,216 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

$0.199

3,216

$0.203

-

-

$0.199

Argo Parts USA

USA . 2,633 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

$0.197

2,633

$0.203

-

-

$0.197

Ampacity Inc.

Singapore . 4,347 parts In-Stock

1+ parts

$0.442

100+ parts

-

1k+ parts

-

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4,347

$0.442

-

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Corphita

USA . 1,452 parts In-Stock

1+ parts

$0.468

100+ parts

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1,452

$0.468

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Semicontronic

India . 4,155 parts In-Stock

1+ parts

$0.890

100+ parts

$0.868

1k+ parts

$0.863

10k+ parts

-

4,155

$0.890

$0.868

$0.863

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Kulean Microsystems

USA . 4,627 parts In-Stock

1+ parts

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100+ parts

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4,627

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SupplyDigital Components

Austria . 3,917 parts In-Stock

1+ parts

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3,917

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Problanco Electronics

Mexico . 2,402 parts In-Stock

1+ parts

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2,402

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UHIMA Technologies

Türkiye . 296 parts In-Stock

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296

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TANS Electronics

Latvia . 138 parts In-Stock

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138

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Overview

Discover the power of protection with the SZ1SMB60AT3G by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-quality products that provide reliable safeguarding for your electronic components. Ideal for a wide range of applications, this single-configured device offers maximum non-repetitive peak reverse power dissipation of 600W and nominal breakdown voltage of 70.2V. With its small outline package style and high operating temperature range, this zener diode is a must-have for ensuring the longevity and efficiency of your circuits. Trust Onsemi to deliver the value, benefits, and advantages you need to keep your electronics safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable, ensuring longevity.

Config: SINGLE

The single configuration simplifies installation and maintenance, making it user-friendly and convenient.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on circuit boards, saving space and improving overall design efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high power dissipation capability, this device can effectively handle surges and protect sensitive electronics from damage.

Nominal Breakdown Voltage: 70.2 V

The nominal breakdown voltage ensures reliable and consistent protection against voltage spikes, safeguarding the connected components.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and mounting on circuit boards, optimizing space utilization.

No. of Terminals: 2

The two terminals provide a simple and effective connection interface, enabling easy integration into existing circuitry.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for a compact design, ideal for applications with limited room for components.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures stable performance in various environmental conditions, enhancing the product's reliability.

Minimum Operating Temperature: -65 °C

The low operating temperature threshold allows for operation in extreme cold environments without compromising functionality.

Terminal Finish: TIN

The terminal finish of tin provides a reliable and corrosion-resistant connection, ensuring long-term performance and durability.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and enhances the device's compatibility with different circuit layouts.

Maximum Power Dissipation: 0.55 W

The low power dissipation ensures efficient energy use and minimizes heat generation, increasing the product's lifespan.

Minimum Breakdown Voltage: 66.7 V

The high minimum breakdown voltage provides effective protection against voltage surges, preventing damage to connected devices.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature allows for quick and reliable soldering during assembly, reducing production time.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures the device can withstand the soldering process without affecting its performance.

Maximum Breakdown Voltage: 73.7 V

The high maximum breakdown voltage offers an added layer of protection against voltage spikes, enhancing the device's reliability and longevity.

Reference Standard: AEC-Q101; UL RECOGNIZED

The compliance with industry standards ensures the product meets quality requirements and can be used in various applications with confidence.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type of transient voltage suppressor provides effective protection against voltage spikes, enhancing the stability and reliability of the circuit.

Technology: ZENER

The Zener technology enables precise and efficient voltage regulation, ensuring consistent performance and protection for connected electronics.

Terminal Form: C BEND

The C bend terminal form allows for secure and easy connection during installation, ensuring a reliable electrical connection.

Maximum Repetitive Peak Reverse Voltage: 60 V

The high maximum repetitive peak reverse voltage rating ensures continuous protection against reverse voltage spikes, safeguarding the circuit components.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of the device ensures protection against voltage spikes in one direction, preventing damage to connected electronics.

Maximum Clamping Voltage: 96.8 V

The high maximum clamping voltage capability ensures effective suppression of voltage spikes, safeguarding the circuitry from potential damage.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures efficient and reliable performance, providing long-lasting protection for connected devices.

Technical Specifications

Transient Suppression Devices SZ1SMB60AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

73.7 V

Minimum Breakdown Voltage:

66.7 V

Nominal Breakdown Voltage:

70.2 V

Maximum Clamping Voltage:

96.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZ1SMB60AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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