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SZ1SMB6.0AT3G

Onsemi

SZ1SMB6.0AT3G by Onsemi

SZ1SMB6.0AT3G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 600W power dissipation, 7.02V breakdown voltage, and 10.3V max clamping voltage. It is used for transient suppression in automotive applications due to AEC-Q101 and UL recognition standards, offering unidirectional polarity and silicon diode element material for protection against voltage spikes.

Median Price

$0.810

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,135 parts In-Stock

1+ parts

$0.810

100+ parts

$0.320

1k+ parts

$0.242

10k+ parts

$0.175

3,135

$0.810

$0.320

$0.242

$0.175

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.203

-

-

-

Digiode

USA . 1,458 parts In-Stock

1+ parts

$0.494

100+ parts

-

1k+ parts

-

10k+ parts

-

1,458

$0.494

-

-

-

Vyrian

USA . 632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

632

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 7,302 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

-

10k+ parts

-

7,302

$0.096

-

-

-

Corohmni

South Africa . 171 parts In-Stock

1+ parts

$0.181

100+ parts

-

1k+ parts

-

10k+ parts

-

171

$0.181

-

-

-

Continental Prestige Electronics

USA . 6,854 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

$0.199

6,854

$0.203

-

-

$0.199

Argo Parts USA

USA . 1,034 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

$0.197

1,034

$0.203

-

-

$0.197

Ampacity Inc.

Singapore . 757 parts In-Stock

1+ parts

$0.442

100+ parts

-

1k+ parts

-

10k+ parts

-

757

$0.442

-

-

-

Corphita

USA . 869 parts In-Stock

1+ parts

$0.468

100+ parts

-

1k+ parts

-

10k+ parts

-

869

$0.468

-

-

-

SupplyDigital Components

Austria . 5,473 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,473

-

-

-

-

Problanco Electronics

Mexico . 2,385 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,385

-

-

-

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Kulean Microsystems

USA . 619 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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619

-

-

-

-

UHIMA Technologies

Türkiye . 588 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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588

-

-

-

-

TANS Electronics

Latvia . 176 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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176

-

-

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

-

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-

-

Overview

Protect your electronic devices with the SZ1SMB6.0AT3G by Onsemi, a top-quality transient suppression device that offers unparalleled protection from voltage spikes and surges. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With its high power dissipation capacity and reliable performance, this device ensures the safety and longevity of your equipment. Experience peace of mind knowing that your electronics are safeguarded against harmful voltage fluctuations. Upgrade to the SZ1SMB6.0AT3G today and enjoy the benefits of superior protection and quality engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and heat-resistant material, ensuring longevity and reliability.

Config: SINGLE

Simplified design for easy installation and use.

Surface Mount: YES

Convenient for mounting on circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability, providing robust protection against transient surges.

Nominal Breakdown Voltage: 7.02 V

Precise breakdown voltage for effective transient suppression.

Package Shape: RECTANGULAR

Compact shape for efficient PCB layout and space utilization.

No. of Terminals: 2

Simplified connectivity for easy integration into circuitry.

Package Style (Meter): SMALL OUTLINE

Space-saving design suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

High operating temperature range for versatile application environments.

Minimum Operating Temperature: -65 °C

Wide temperature range for operation in various conditions.

Terminal Position: DUAL

Dual terminal position for flexible installation and connectivity options.

Maximum Power Dissipation: 0.55 W

Efficient power dissipation to protect against transient overloads.

Minimum Breakdown Voltage: 6.67 V

Critical voltage threshold for reliable transient suppression.

Maximum Breakdown Voltage: 7.37 V

High maximum breakdown voltage for enhanced protection.

Reference Standard: AEC-Q101; UL RECOGNIZED

Compliance with industry standards for quality and safety assurance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient voltage suppression applications.

Technology: ZENER

Zener technology for precise voltage regulation and protection.

Terminal Form: C BEND

C-bend terminal form for secure connection and stability.

Maximum Repetitive Peak Reverse Voltage: 6 V

Suitable voltage rating for effective transient suppression.

Polarity: UNIDIRECTIONAL

Unidirectional polarity for one-way voltage clamping.

Maximum Clamping Voltage: 10.3 V

High clamping voltage to limit transient voltages effectively.

Diode Element Material: SILICON

Silicon material for reliable diode performance and durability.

Technical Specifications

Transient Suppression Devices SZ1SMB6.0AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

7.37 V

Minimum Breakdown Voltage:

6.67 V

Nominal Breakdown Voltage:

7.02 V

Maximum Clamping Voltage:

10.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

6 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Trade Compliance

SZ1SMB6.0AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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