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SZ1SMA40CAT3G

Onsemi

SZ1SMA40CAT3G by Onsemi

SZ1SMA40CAT3G by Onsemi is a Zener diode with 400W peak power dissipation, 46.7V breakdown voltage, and 40V repetitive peak reverse voltage. It is used in transient suppression applications for automotive electronics due to its AEC-Q101 standard compliance and bidirectional polarity.

Median Price

$0.444

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,719 parts In-Stock

1+ parts

$0.244

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$0.244

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$0.244

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3,719

$0.244

$0.244

$0.244

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Mouser Electronics

USA . 22,216 parts In-Stock

1+ parts

$0.740

100+ parts

$0.320

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$0.214

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$0.144

22,216

$0.740

$0.320

$0.214

$0.144

DigiKey

USA . 24,956 parts In-Stock

1+ parts

$0.850

100+ parts

$0.342

1k+ parts

$0.235

10k+ parts

$0.213

24,956

$0.850

$0.342

$0.235

$0.213

Verical

USA . 4,800 parts In-Stock

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-

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$0.477

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4,800

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$0.477

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Farnell

UK . 144 parts In-Stock

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$0.226

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$0.221

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$0.219

144

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$0.226

$0.221

$0.219

Element14

Singapore . 144 parts In-Stock

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$0.410

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144

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$0.410

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Distributors (In-Stock)

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Digiode

USA . 1,755 parts In-Stock

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$0.232

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1,755

$0.232

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Nova Conductors

Japan . 150 parts In-Stock

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$0.358

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150

$0.358

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TME

Poland . 4,800 parts In-Stock

1+ parts

$0.440

100+ parts

$0.339

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4,800

$0.440

$0.339

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Vyrian

USA . 6,259 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,264 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,379 parts In-Stock

1+ parts

$0.010

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2,379

$0.010

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Ampacity Inc.

Singapore . 6,369 parts In-Stock

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$0.207

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6,369

$0.207

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Corphita

USA . 1,826 parts In-Stock

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$0.220

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1,826

$0.220

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Corohmni

South Africa . 458 parts In-Stock

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$0.244

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458

$0.244

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.351

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$0.337

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500

$0.351

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$0.337

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Argo Parts USA

USA . 1,544 parts In-Stock

1+ parts

$0.358

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$0.348

1,544

$0.358

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-

$0.348

Component Stockers USA

USA . 21,017 parts In-Stock

1+ parts

$0.380

100+ parts

$0.380

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$0.330

10k+ parts

$0.300

21,017

$0.380

$0.380

$0.330

$0.300

Semicontronic

India . 6,011 parts In-Stock

1+ parts

$0.451

100+ parts

$0.440

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$0.437

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6,011

$0.451

$0.440

$0.437

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Continental Prestige Electronics

USA . 1,904 parts In-Stock

1+ parts

$0.679

100+ parts

$0.458

1k+ parts

$0.263

10k+ parts

$0.235

1,904

$0.679

$0.458

$0.263

$0.235

Perfect Parts

USA . 3,683 parts In-Stock

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3,683

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Kulean Microsystems

USA . 1,700 parts In-Stock

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SupplyDigital Components

Austria . 1,346 parts In-Stock

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Problanco Electronics

Mexico . 960 parts In-Stock

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UHIMA Technologies

Türkiye . 488 parts In-Stock

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TANS Electronics

Latvia . 218 parts In-Stock

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Advanced Electronics

New Zealand . 76 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the SZ1SMA40CAT3G by Onsemi. With a commitment to quality and innovation, Onsemi delivers top-notch products that exceed industry standards. The SZ1SMA40CAT3G is perfect for a wide range of applications, providing superior protection against voltage spikes and surges. Trust Onsemi to provide you with the value, benefits, and advantages you need to keep your electronics safe and running smoothly. Choose Onsemi for peace of mind and top-notch performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the device lightweight and durable, perfect for portable applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

With a high maximum power dissipation, this device can handle surges and transients effectively, ensuring reliable protection for sensitive electronic components.

Nominal Breakdown Voltage: 46.7 V

The precise nominal breakdown voltage allows for accurate protection against overvoltage conditions, safeguarding the connected circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures the device can withstand extreme conditions, making it suitable for a wide range of environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures fast response times and efficient suppression of voltage spikes, enhancing the overall protection provided by the device.

Technical Specifications

Transient Suppression Devices SZ1SMA40CAT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

49.07 V

Minimum Breakdown Voltage:

44.4 V

Nominal Breakdown Voltage:

46.7 V

Maximum Clamping Voltage:

64.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZ1SMA40CAT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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