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SZ1SMB26AT3G

Onsemi

SZ1SMB26AT3G by Onsemi

SZ1SMB26AT3G by Onsemi is a Zener diode with 600W power dissipation, 30.4V breakdown voltage, and 26V peak reverse voltage. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and UL recognition.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 51 parts In-Stock

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$0.058

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51

$0.058

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Arrow

USA . 342 parts In-Stock

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$0.299

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$0.227

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$0.150

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342

$0.299

$0.227

$0.150

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Element14

Singapore . 326 parts In-Stock

1+ parts

$0.527

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$0.295

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$0.171

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$0.168

326

$0.527

$0.295

$0.171

$0.168

Mouser Electronics

USA . 8,553 parts In-Stock

1+ parts

$0.720

100+ parts

$0.295

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$0.227

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$0.165

8,553

$0.720

$0.295

$0.227

$0.165

DigiKey

USA . 19,862 parts In-Stock

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$0.150

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Chip1Stop

Japan . 3,849 parts In-Stock

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$0.198

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$0.165

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$0.162

3,849

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$0.198

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$0.162

Verical

USA . 342 parts In-Stock

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$0.227

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$0.150

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342

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$0.150

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Farnell

UK . 326 parts In-Stock

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$0.261

326

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$0.261

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.229

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50

$0.229

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Digiode

USA . 1,186 parts In-Stock

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$0.456

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$0.456

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Bristol Electronics

USA . 4,950 parts In-Stock

1+ parts

$0.725

100+ parts

$0.363

1k+ parts

$0.145

10k+ parts

$0.109

4,950

$0.725

$0.363

$0.145

$0.109

Chip Stock

USA . 67,000 parts In-Stock

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Dan-Mar Components

USA . 4,950 parts In-Stock

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Vyrian

USA . 3,849 parts In-Stock

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Sensible Micro Corp

USA . 3,645 parts In-Stock

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PC Components Company LLC

USA . 2,500 parts In-Stock

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2,500

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IBS Electronics

USA . 2,500 parts In-Stock

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$0.230

2,500

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$0.230

ACDS - Activité Composants Distribution Service

France . 2,450 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,136 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,819 parts In-Stock

1+ parts

$0.126

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3,819

$0.126

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Corohmni

South Africa . 165 parts In-Stock

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$0.130

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165

$0.130

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Argo Parts USA

USA . 4,643 parts In-Stock

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$0.229

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$0.223

4,643

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Corphita

USA . 457 parts In-Stock

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$0.432

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457

$0.432

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Continental Prestige Electronics

USA . 413 parts In-Stock

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$0.444

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$0.284

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Kepictronics

USA . 49,900 parts In-Stock

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Metaverse IC Inc.

Canada . 26,561 parts In-Stock

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TANS Electronics

Latvia . 7,408 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 3,213 parts In-Stock

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Perfect Parts

USA . 3,165 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.225

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$0.218

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$0.213

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Problanco Electronics

Mexico . 721 parts In-Stock

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721

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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SupplyDigital Components

Austria . 164 parts In-Stock

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Overview

Enhance your electronic devices with the SZ1SMB26AT3G by Onsemi, a top-quality transient suppression device designed to protect against voltage spikes and surges. Manufactured by Onsemi, a reputable industry leader known for their cutting-edge technology and reliable products, this small outline package offers a maximum non repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 30.4V. Ideal for a wide range of applications, this unidirectional zener diode provides superior protection and peace of mind. Upgrade your devices today with the SZ1SMB26AT3G and experience the lasting benefits it brings.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the device, ensuring reliability and durability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability allows the device to handle large surges of energy without getting damaged, making it suitable for heavy-duty applications.

Nominal Breakdown Voltage: 30.4 V

The specific breakdown voltage helps in protecting the circuit by clamping the voltage at a safe level during transient events.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures the device can function effectively in various environmental conditions.

Reference Standard: AEC-Q101; UL RECOGNIZED

Compliance with industry standards ensures the quality and reliability of the product, making it a trusted choice for users.

Technical Specifications

Transient Suppression Devices SZ1SMB26AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

31.9 V

Minimum Breakdown Voltage:

28.9 V

Nominal Breakdown Voltage:

30.4 V

Maximum Clamping Voltage:

42.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

26 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZ1SMB26AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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