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SZ1SMA60CAT3G

Onsemi

SZ1SMA60CAT3G by Onsemi

SZ1SMA60CAT3G by Onsemi is a Zener diode with 400W peak power dissipation, 70.21V breakdown voltage, and 2.5uA reverse current. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and bidirectional polarity.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 2,114 parts In-Stock

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Vyrian

USA . 656 parts In-Stock

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Nova Conductors

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Aztec Data Supply Inc.

USA . 2,319 parts In-Stock

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$0.050

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Corohmni

South Africa . 1,056 parts In-Stock

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$0.078

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Ampacity Inc.

Singapore . 564 parts In-Stock

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AZTECH Wire

Italy . 398 parts In-Stock

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Kulean Microsystems

USA . 8,343 parts In-Stock

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Problanco Electronics

Mexico . 7,838 parts In-Stock

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Continental Prestige Electronics

USA . 5,425 parts In-Stock

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Argo Parts USA

USA . 4,849 parts In-Stock

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TANS Electronics

Latvia . 3,383 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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SupplyDigital Components

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Bastille Electronics

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Overview

Enhance your electronic circuits with the SZ1SMA60CAT3G by Onsemi, a top-tier manufacturer known for quality and reliability. This Transient Suppression Device offers superior protection against voltage spikes, making it ideal for a wide range of applications. With a high power dissipation of 400W and a maximum clamping voltage of 96.8V, this product ensures optimal performance and durability. Trust Onsemi to deliver cutting-edge technology and innovative solutions that provide value and peace of mind to customers in need of reliable transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides excellent durability and protection, making it suitable for various environmental conditions.

Surge Suppression Configuration: SINGLE

The single configuration simplifies installation and maintenance, reducing potential points of failure and ensuring efficient surge suppression.

Surface Mount: YES

The surface mount capability allows for easy and space-saving integration onto circuit boards, making it ideal for compact electronic devices.

Maximum Non-Repetitive Peak Reverse Power Dissipation: 400 W

With a high power dissipation rating, this device can effectively handle large transient surges without damage, offering reliable protection for sensitive components.

Nominal Breakdown Voltage: 70.21 V

The precise breakdown voltage ensures consistent performance in suppressing transient voltage spikes, providing reliable protection for connected equipment.

Maximum Clamping Voltage: 96.8 V

The maximum clamping voltage limits the peak voltage that will be experienced by downstream components, preventing damage and ensuring the safety of the overall system.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes provides fast response times and low clamping voltages, effectively diverting excess voltage away from sensitive components.

Technology: ZENER

The Zener technology enables the device to provide precise voltage regulation and protection, ensuring stable operation of the connected circuits.

Technical Specifications

Transient Suppression Devices SZ1SMA60CAT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

73.72 V

Minimum Breakdown Voltage:

66.7 V

Nominal Breakdown Voltage:

70.21 V

Maximum Clamping Voltage:

96.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

2.5 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZ1SMA60CAT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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