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SMS12T1G

Onsemi

SMS12T1G by Onsemi

SMS12T1G by Onsemi is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 14.1V. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 6,137 parts In-Stock

1+ parts

$0.278

100+ parts

$0.138

1k+ parts

$0.117

10k+ parts

-

6,137

$0.278

$0.138

$0.117

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Mouser Electronics

USA . 13,483 parts In-Stock

1+ parts

$0.580

100+ parts

$0.226

1k+ parts

$0.155

10k+ parts

-

13,483

$0.580

$0.226

$0.155

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DigiKey

USA . 53,830 parts In-Stock

1+ parts

$0.630

100+ parts

$0.248

1k+ parts

$0.168

10k+ parts

-

53,830

$0.630

$0.248

$0.168

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Rochester

USA . 197,175 parts In-Stock

1+ parts

-

100+ parts

$0.128

1k+ parts

$0.106

10k+ parts

$0.095

197,175

-

$0.128

$0.106

$0.095

Verical

USA . 197,175 parts In-Stock

1+ parts

-

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$0.119

197,175

-

-

-

$0.119

Future Electronics

Canada . 15,000 parts In-Stock

1+ parts

-

100+ parts

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$0.171

15,000

-

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$0.171

Farnell

UK . 6,562 parts In-Stock

1+ parts

-

100+ parts

$0.117

1k+ parts

$0.100

10k+ parts

$0.095

6,562

-

$0.117

$0.100

$0.095

Element14

Singapore . 6,562 parts In-Stock

1+ parts

-

100+ parts

$0.191

1k+ parts

$0.155

10k+ parts

$0.152

6,562

-

$0.191

$0.155

$0.152

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.115

6,000

-

-

-

$0.115

Chip1Stop

Japan . 4,125 parts In-Stock

1+ parts

-

100+ parts

$0.126

1k+ parts

$0.104

10k+ parts

$0.097

4,125

-

$0.126

$0.104

$0.097

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 215 parts In-Stock

1+ parts

$0.100

100+ parts

-

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215

$0.100

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Vyrian

USA . 2,404 parts In-Stock

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$0.100

100+ parts

-

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-

10k+ parts

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2,404

$0.100

-

-

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TME

Poland . 2,737 parts In-Stock

1+ parts

$0.300

100+ parts

$0.139

1k+ parts

-

10k+ parts

$0.126

2,737

$0.300

$0.139

-

$0.126

Bristol Electronics

USA . 210 parts In-Stock

1+ parts

$0.563

100+ parts

$0.208

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-

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210

$0.563

$0.208

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Chip Stock

USA . 58,000 parts In-Stock

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58,000

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

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$0.160

18,000

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$0.160

Flip Electronics

USA . 15,000 parts In-Stock

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15,000

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Lantek

USA . 3,000 parts In-Stock

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3,000

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IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.128

3,000

-

-

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$0.128

Microfarads

USA . 198 parts In-Stock

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198

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 322 parts In-Stock

1+ parts

$0.094

100+ parts

-

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322

$0.094

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Corohmni

South Africa . 216 parts In-Stock

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$0.105

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216

$0.105

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Continental Prestige Electronics

USA . 2,629 parts In-Stock

1+ parts

$0.400

100+ parts

$0.198

1k+ parts

$0.113

10k+ parts

$0.098

2,629

$0.400

$0.198

$0.113

$0.098

Kepictronics

USA . 63,000 parts In-Stock

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Perfect Parts

USA . 42,931 parts In-Stock

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GreenTree Electronics

Israel . 27,000 parts In-Stock

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27,000

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Eastek

USA . 24,000 parts In-Stock

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$0.140

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24,000

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$0.140

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Lixinc

USA . 15,216 parts In-Stock

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15,216

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Problanco Electronics

Mexico . 8,158 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Glotronic Ltd.

UK . 7,200 parts In-Stock

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7,200

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Kulean Microsystems

USA . 4,186 parts In-Stock

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4,186

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SupplyDigital Components

Austria . 2,715 parts In-Stock

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2,715

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TANS Electronics

Latvia . 1,991 parts In-Stock

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1,991

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UHIMA Technologies

Türkiye . 676 parts In-Stock

1+ parts

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676

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Overview

Looking for reliable transient suppression devices? Look no further than the SMS12T1G by Onsemi. With a common anode configuration and four elements, this device offers top-notch protection against voltage spikes. Its small outline package makes it easy to integrate into various applications. Trust Onsemi's reputation for quality and innovation to keep your electronics safe. Upgrade to the SMS12T1G today and experience the peace of mind that comes with superior surge protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good insulation, ensuring safety and reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

High power dissipation capability protects the circuit from surges and transients effectively.

Nominal Breakdown Voltage: 14.1 V

The breakdown voltage helps in clamping and suppressing transient voltages effectively.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed diodes for transient suppression ensure superior performance in protecting the circuit.

Technical Specifications

Transient Suppression Devices SMS12T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14.1 V

Maximum Clamping Voltage:

19 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMS12T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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