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SMS12CT1G

Onsemi

SMS12CT1G by Onsemi

SMS12CT1G by Onsemi is a transient suppression device with 5 common anode elements. It has a max power dissipation of 350W, breakdown voltage of 15V, and operates b/w -40 to 150 °C. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.151

Lifecycle Status

EOL

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,650 parts In-Stock

1+ parts

$0.275

100+ parts

$0.131

1k+ parts

$0.114

10k+ parts

$0.114

1,650

$0.275

$0.131

$0.114

$0.114

Flip Electronics (Authorized)

USA . 6,125 parts In-Stock

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Rochester

USA . 6,000 parts In-Stock

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-

100+ parts

$0.151

1k+ parts

$0.125

10k+ parts

$0.112

6,000

-

$0.151

$0.125

$0.112

Avnet

USA . 3,000 parts In-Stock

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3,000

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Verical

USA . 1,650 parts In-Stock

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-

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$0.131

1k+ parts

$0.114

10k+ parts

$0.114

1,650

-

$0.131

$0.114

$0.114

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,956 parts In-Stock

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$0.118

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$0.118

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Vyrian

USA . 2,230 parts In-Stock

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$0.124

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$0.124

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Bristol Electronics

USA . 9,310 parts In-Stock

1+ parts

$0.450

100+ parts

$0.225

1k+ parts

$0.090

10k+ parts

$0.056

9,310

$0.450

$0.225

$0.090

$0.056

Dan-Mar Components

USA . 9,000 parts In-Stock

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Chip Stock

USA . 7,210 parts In-Stock

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Flip Electronics

USA . 6,125 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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3,000

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NAC Semi

USA . 3,000 parts In-Stock

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$0.188

3,000

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$0.188

LIBRA Elektronik GmbH

Germany . 1,675 parts In-Stock

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1,675

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Microfarads

USA . 293 parts In-Stock

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293

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Cyclops Electronics Ltd

UK . 100 parts In-Stock

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100

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Distributors (Availability)

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Corphita

USA . 2,060 parts In-Stock

1+ parts

$0.112

100+ parts

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$0.112

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Corohmni

South Africa . 249 parts In-Stock

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$0.124

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249

$0.124

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Component Stockers USA

USA . 2,363 parts In-Stock

1+ parts

$0.420

100+ parts

$0.240

1k+ parts

$0.110

10k+ parts

-

2,363

$0.420

$0.240

$0.110

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Continental Prestige Electronics

USA . 155 parts In-Stock

1+ parts

$0.483

100+ parts

$0.230

1k+ parts

$0.134

10k+ parts

$0.104

155

$0.483

$0.230

$0.134

$0.104

Kepictronics

USA . 158,900 parts In-Stock

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Perfect Parts

USA . 125,474 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Problanco Electronics

Mexico . 7,187 parts In-Stock

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TANS Electronics

Latvia . 4,262 parts In-Stock

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SupplyDigital Components

Austria . 1,238 parts In-Stock

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Kulean Microsystems

USA . 352 parts In-Stock

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352

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UHIMA Technologies

Türkiye . 77 parts In-Stock

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77

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Overview

Upgrade your electronic devices with the SMS12CT1G transient suppression device from Onsemi. Designed with cutting-edge technology, this diode offers reliable protection against voltage spikes and surges, ensuring the longevity of your equipment. With a maximum clamping voltage of 14.5V, this device is ideal for a wide range of applications where high performance and durability are essential. Trust Onsemi's reputation for quality and innovation, and experience the peace of mind that comes with superior protection for your valuable electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

The high power dissipation capability allows the device to handle large amounts of transient energy, protecting connected equipment effectively.

Nominal Breakdown Voltage: 6.7 V

Effective in clamping voltage spikes to a safe level, preventing damage to sensitive electronics.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without losing efficiency, making it suitable for various applications.

Minimum Breakdown Voltage: 13.3 V

Provides a wide range of protection against different voltage levels, ensuring versatility in protection capabilities.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, making it highly effective in safeguarding electronic circuits from voltage spikes.

Technology: AVALANCHE

Utilizes avalanche breakdown mechanism for efficient and rapid response to voltage surges, enhancing protection performance.

Technical Specifications

Transient Suppression Devices SMS12CT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

14.5 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BID

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMS12CT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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