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SMS12T1

Onsemi

SMS12T1 by Onsemi

SMS12T1 by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max power dissipation of 350W and breakdown voltage of 14.1V. Ideal for applications requiring protection against voltage transients in compact spaces.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,480 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

3,480

-

$0.132

$0.110

$0.098

DigiKey

USA . 3,480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.170

3,480

-

-

-

$0.170

Verical

USA . 3,410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.122

3,410

-

-

-

$0.122

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 69 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

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69

$0.097

-

-

-

Digiode

USA . 982 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

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982

$0.103

-

-

-

Chip Stock

USA . 38,000 parts In-Stock

1+ parts

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38,000

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Vyrian

USA . 6,940 parts In-Stock

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6,940

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,164 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

3,164

$0.087

-

-

-

Corohmni

South Africa . 373 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

-

373

$0.095

-

-

-

Argo Parts USA

USA . 4,296 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

$0.094

4,296

$0.097

-

-

$0.094

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

$0.092

10k+ parts

$0.090

1,000

$0.097

-

$0.092

$0.090

Corphita

USA . 904 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

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904

$0.097

-

-

-

AZTECH Wire

Italy . 843 parts In-Stock

1+ parts

$12.600

100+ parts

-

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843

$12.600

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Problanco Electronics

Mexico . 7,791 parts In-Stock

1+ parts

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7,791

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TANS Electronics

Latvia . 7,691 parts In-Stock

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7,691

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Kulean Microsystems

USA . 4,178 parts In-Stock

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4,178

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Continental Prestige Electronics

USA . 3,480 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.093

10k+ parts

-

3,480

-

-

$0.093

-

S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Kepictronics

USA . 2,050 parts In-Stock

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2,050

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SupplyDigital Components

Austria . 876 parts In-Stock

1+ parts

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876

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UHIMA Technologies

Türkiye . 228 parts In-Stock

1+ parts

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228

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Overview

Upgrade your electronic devices with the Onsemi SMS12T1 Transient Suppression Device. Designed to provide reliable protection against voltage spikes and surges, this high-quality product offers peace of mind for your valuable equipment. With a common anode configuration and four elements, this device is versatile and suitable for a range of applications. Trust in the expertise of Onsemi, a reputable manufacturer known for delivering top-notch solutions. Enhance the performance and longevity of your electronics with the SMS12T1 - because quality matters.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, perfect for various applications.

Config: COMMON ANODE, 4 ELEMENTS

The common anode configuration with 4 elements allows for efficient transient suppression, providing reliable protection for sensitive electronic components.

Surface Mount: YES

Being surface mountable makes installation quick and easy, saving time and labor costs during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

With a high maximum non-repetitive peak reverse power dissipation, this device can handle surges effectively, ensuring the safety of connected equipment.

Nominal Breakdown Voltage: 14.1 V

The nominal breakdown voltage of 14.1 V indicates the level at which the device starts conducting, offering reliable protection within this voltage range.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs, optimizing space utilization.

No. of Terminals: 6

Having 6 terminals provides flexibility in connection options, accommodating various circuit layouts.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this device suitable for compact designs where space is limited.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good electrical conductivity and solderability, maintaining reliable connections.

Terminal Position: DUAL

The dual terminal position offers more stability and support during installation, reducing the risk of disconnection.

Maximum Power Dissipation: 0.225 W

The low maximum power dissipation helps in keeping energy losses to a minimum, enhancing the efficiency of the device.

Minimum Breakdown Voltage: 13.3 V

The minimum breakdown voltage of 13.3 V sets the threshold for protection, ensuring reliable performance within this voltage range.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature of 235°C, this device can withstand soldering processes without damage.

Maximum Breakdown Voltage: 15 V

The maximum breakdown voltage of 15 V signifies the upper limit at which the device can safely operate, providing a wide margin of protection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diodes ensures effective suppression of voltage spikes, safeguarding sensitive components.

Technology: AVALANCHE

The avalanche technology employed in this device allows for quick response and reliable protection against transient surges.

Terminal Form: GULL WING

The gull wing terminal form offers mechanical stability and ease of soldering, enhancing the overall durability of the device.

No. of Elements: 4

Having 4 elements provides redundancy and improved protection against transient events from multiple directions.

Maximum Repetitive Peak Reverse Voltage: 12 V

The high maximum repetitive peak reverse voltage rating of 12 V ensures consistent performance under repeated transient conditions.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of this device directs surge currents in one direction, simplifying circuit design and ensuring effective suppression.

Maximum Clamping Voltage: 19 V

With a maximum clamping voltage of 19 V, this device limits the voltage across connected equipment, preventing damage from transient surges.

Diode Element Material: SILICON

The silicon diode element material utilized in this device offers high reliability, temperature stability, and consistent performance over time.

Technical Specifications

Transient Suppression Devices SMS12T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14.1 V

Maximum Clamping Voltage:

19 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMS12T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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