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SMS15T1

Onsemi

SMS15T1 by Onsemi

SMS15T1 by Onsemi is a Transient Suppression Device with a max non-repetitive peak reverse power dissipation of 350W. It has a breakdown voltage of 17.6V and is commonly used for avalanche technology applications.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,819 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

2,819

-

$0.119

$0.099

$0.088

Verical

USA . 2,819 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.149

2,819

-

-

-

$0.149

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.087

-

-

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Digiode

USA . 195 parts In-Stock

1+ parts

$0.093

100+ parts

-

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195

$0.093

-

-

-

Chip Stock

USA . 15,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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15,500

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Vyrian

USA . 6,974 parts In-Stock

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6,974

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,588 parts In-Stock

1+ parts

$0.083

100+ parts

-

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2,588

$0.083

-

-

-

Corohmni

South Africa . 381 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

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381

$0.083

-

-

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

$0.082

10k+ parts

-

50

$0.085

-

$0.082

-

Argo Parts USA

USA . 4,878 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

4,878

$0.087

-

-

$0.084

Continental Prestige Electronics

USA . 2,202 parts In-Stock

1+ parts

$0.087

100+ parts

-

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$0.085

2,202

$0.087

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-

$0.085

Corphita

USA . 2,318 parts In-Stock

1+ parts

$0.088

100+ parts

-

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2,318

$0.088

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AZTECH Wire

Italy . 136 parts In-Stock

1+ parts

$15.430

100+ parts

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136

$15.430

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TANS Electronics

Latvia . 7,047 parts In-Stock

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7,047

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Problanco Electronics

Mexico . 5,617 parts In-Stock

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5,617

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Kulean Microsystems

USA . 5,213 parts In-Stock

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5,213

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SupplyDigital Components

Austria . 5,179 parts In-Stock

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5,179

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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UHIMA Technologies

Türkiye . 691 parts In-Stock

1+ parts

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691

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Overview

Discover the SMS15T1 by Onsemi, the ultimate solution for transient suppression. Manufactured by Onsemi, a leading industry expert known for their superior quality, this device is designed to protect your electronics from voltage spikes and surges. With its common anode configuration and four elements, it offers reliable protection while being easy to install thanks to its surface mount capabilities. The SMS15T1 boasts a maximum clamping voltage of 24V and a minimum breakdown voltage of 16.7V, ensuring optimal performance in any situation. Whether you're safeguarding sensitive circuitry or preventing damage to your valuable equipment, the SMS15T1 is the answer. Trust Onsemi and experience the peace of mind that comes with exceptional quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, ensuring reliable protection against transient voltage spikes.

Config: COMMON ANODE, 4 ELEMENTS

The common anode configuration with four elements allows for effective voltage suppression across multiple circuits, enhancing overall protection and reducing the risk of damage to sensitive electronic components.

Surface Mount: YES

Being surface mountable, this product offers easy and convenient installation on PCBs, saving valuable space and simplifying assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

With a high maximum non-repetitive peak reverse power dissipation capability of 350 W, this device is capable of handling large transient voltage spikes, providing robust protection for your electronic devices.

Nominal Breakdown Voltage: 17.6 V

Featuring a nominal breakdown voltage of 17.6 V, this transient suppression device effectively limits voltage surges to a safe level, preventing potential damage to connected equipment.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization and easy integration into existing electronic systems.

No. of Terminals: 6

With six terminals, this device offers a secure and reliable connection, ensuring effective voltage suppression and minimal signal interference.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this product ideal for applications where space is limited, allowing for compatibility with compact designs.

Terminal Finish: TIN LEAD

The terminal finish with tin lead coating provides excellent conductivity and corrosion resistance, ensuring long-term performance and durability.

Terminal Position: DUAL

The dual terminal position enables flexible and versatile installation, accommodating different PCB layouts and facilitating efficient circuit designs.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, this device operates with low energy consumption, making it an energy-efficient and cost-effective solution.

Minimum Breakdown Voltage: 16.7 V

The minimum breakdown voltage of 16.7 V ensures reliable protection against transients, allowing for safe operation of electronic devices even in high-voltage environments.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235°C, this device can withstand high-temperature soldering processes, guaranteeing secure and reliable solder joints during assembly.

Maximum Breakdown Voltage: 18.5 V

The maximum breakdown voltage of 18.5 V provides an extra margin of safety, preventing voltage spikes from surpassing the threshold and safeguarding sensitive components from potential damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type enables the device to efficiently suppress transient voltage spikes by redirecting excessive current away from vulnerable components, ensuring reliable protection against voltage surges.

Technology: AVALANCHE

Utilizing avalanche technology, this transient suppression device rapidly dissipates excessive energy, effectively clamping voltage spikes and protecting connected devices from damage.

Terminal Form: GULL WING

The gull wing terminal form offers secure solder joints, making this device suitable for applications that require reliable electrical connections and long-term operational stability.

No. of Elements: 4

Featuring four elements, this device provides multiple barriers to transient voltages, enhancing protection and minimizing the risk of electrical disturbances.

Maximum Repetitive Peak Reverse Voltage: 15 V

Capable of withstanding repetitive peak reverse voltages up to 15 V, this device provides continuous protection against transient voltage spikes, ensuring the longevity and reliability of connected equipment.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this product exhibits excellent resistance to moisture-related issues, making it suitable for various environments and reducing the potential for electrical failure.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device effectively suppresses voltage spikes in one direction, providing precise protection for sensitive components and minimizing the risk of reverse current flow.

Maximum Clamping Voltage: 24 V

The maximum clamping voltage of 24 V limits the voltage spikes to a safe level, preventing damage to connected equipment and helping to maintain reliable operation.

Diode Element Material: SILICON

The use of silicon as the diode element material offers excellent electrical performance and temperature stability, making this device highly reliable and suitable for demanding applications.

Technical Specifications

Transient Suppression Devices SMS15T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

24 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMS15T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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