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SMS15T1G

Onsemi

SMS15T1G by Onsemi

SMS15T1G by Onsemi is a transient suppression device with 4 common anode elements. It has a max power dissipation of 350W and breakdown voltage of 17.6V, making it ideal for protecting electronic circuits from voltage spikes in applications such as automotive electronics and industrial control systems.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9 parts In-Stock

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$0.108

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9

$0.108

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Rochester

USA . 32,000 parts In-Stock

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$0.150

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$0.150

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$0.140

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32,000

$0.150

$0.150

$0.140

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DigiKey

USA . 1,530 parts In-Stock

1+ parts

$0.630

100+ parts

$0.248

1k+ parts

$0.168

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1,530

$0.630

$0.248

$0.168

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Mouser Electronics

USA . 1,325 parts In-Stock

1+ parts

$0.630

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$0.248

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$0.168

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$0.132

1,325

$0.630

$0.248

$0.168

$0.132

Verical

USA . 15,000 parts In-Stock

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$0.205

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$0.129

15,000

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$0.205

$0.129

Master Electronics

USA . 15,000 parts In-Stock

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$0.174

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$0.109

15,000

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$0.174

$0.109

Chip1Stop

Japan . 6,000 parts In-Stock

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$0.105

6,000

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$0.105

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,155 parts In-Stock

1+ parts

$0.097

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2,155

$0.097

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Digiode

USA . 898 parts In-Stock

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$0.142

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898

$0.142

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IBS Electronics

USA . 24,000 parts In-Stock

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$0.179

10k+ parts

$0.145

24,000

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$0.179

$0.145

K-1 Technologies

USA . 20,834 parts In-Stock

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20,834

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Bristol Electronics

USA . 20,834 parts In-Stock

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Chip Stock

USA . 14,680 parts In-Stock

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14,680

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Cyclops Electronics Ltd

UK . 12,810 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.318

6,000

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$0.318

Semi Source

USA . 5,439 parts In-Stock

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5,439

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ACDS - Activité Composants Distribution Service

France . 718 parts In-Stock

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Dan-Mar Components

USA . 718 parts In-Stock

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718

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Distributors (Availability)

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Corohmni

South Africa . 160 parts In-Stock

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$0.097

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160

$0.097

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Corphita

USA . 2,443 parts In-Stock

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$0.135

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2,443

$0.135

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Continental Prestige Electronics

USA . 337 parts In-Stock

1+ parts

$0.303

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$0.128

1k+ parts

$0.096

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337

$0.303

$0.128

$0.096

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Perfect Parts

USA . 72,107 parts In-Stock

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Kepictronics

USA . 39,832 parts In-Stock

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Authorized Procurement Solutions

USA . 7,868 parts In-Stock

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GreenTree Electronics

Israel . 7,848 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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$0.140

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Problanco Electronics

Mexico . 3,544 parts In-Stock

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SupplyDigital Components

Austria . 2,137 parts In-Stock

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TANS Electronics

Latvia . 1,569 parts In-Stock

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Lixinc

USA . 1,443 parts In-Stock

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Kulean Microsystems

USA . 763 parts In-Stock

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UHIMA Technologies

Türkiye . 561 parts In-Stock

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561

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Overview

Enhance the protection and reliability of your electronic devices with the SMS15T1G transient suppression device by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in every product. The SMS15T1G is designed for common anode configuration with 4 elements, making it ideal for a wide range of applications. With a maximum clamping voltage of 24V, this device effectively safeguards against voltage spikes and surges, providing peace of mind for your valuable equipment. Trust Onsemi to deliver superior protection and performance with the SMS15T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-term performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

Capable of handling high power surges, making it suitable for applications where transient voltage spikes are common.

Nominal Breakdown Voltage: 17.6 V

Provides reliable protection by clamping the voltage at a safe level during transient events.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Uses specialized diodes designed to handle high-voltage transients effectively.

Technical Specifications

Transient Suppression Devices SMS15T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

24 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMS15T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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