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SMS15T3

Onsemi

SMS15T3 by Onsemi

SMS15T3 by Onsemi is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 350W and operates in unidirectional polarity. Ideal for protecting electronic circuits from voltage spikes, it features avalanche technology and is surface mountable in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 980 parts In-Stock

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Vyrian

USA . 171 parts In-Stock

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Kulean Microsystems

USA . 5,689 parts In-Stock

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TANS Electronics

Latvia . 3,971 parts In-Stock

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SupplyDigital Components

Austria . 2,569 parts In-Stock

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Problanco Electronics

Mexico . 1,244 parts In-Stock

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Corphita

USA . 659 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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UHIMA Technologies

Türkiye . 312 parts In-Stock

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Overview

Experience top-notch quality and reliability with the SMS15T3 by Onsemi, a leading manufacturer in transient suppression devices. This versatile product offers exceptional protection against voltage spikes, making it ideal for a wide range of applications. Its common anode configuration and compact package design ensure easy installation and efficient performance. Trust in the value and benefits that the SMS15T3 brings to your projects, providing peace of mind and safeguarding your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the components inside.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration with 4 elements provides efficient suppression of transient voltage spikes.

Surface Mount: YES

Being surface mountable makes it easy to integrate into compact electronic devices and PCBs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

High peak reverse power dissipation capability enables the device to handle large transient surges effectively.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and mounting in various electronic systems.

No. of Terminals: 6

Having 6 terminals provides flexibility in connection options and enhances overall functionality.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for efficient board layout.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good connectivity and reliability in different operating conditions.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting orientations and ease of installation.

Maximum Power Dissipation: 0.225 W

The low power dissipation enhances energy efficiency and heat management of the device.

Minimum Breakdown Voltage: 16.7 V

The minimum breakdown voltage of 16.7 V provides effective protection against lower voltage transients.

Maximum Breakdown Voltage: 18.5 V

The maximum breakdown voltage of 18.5 V offers protection against higher voltage surges, ensuring device longevity.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes are specifically designed for transient suppression applications, making them highly effective in protecting sensitive electronics.

Technology: AVALANCHE

Avalanche technology allows for quick response and high surge handling capabilities, ensuring reliable protection against transient events.

Terminal Form: GULL WING

Gull wing terminal form provides secure soldering connections and mechanical stability.

No. of Elements: 4

Having 4 elements increases the overall suppression performance and reliability of the device.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that transient voltages are effectively clamped in one direction, providing targeted protection for electronics.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SMS15T3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMS15T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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