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SBAV99LT1

Onsemi

SBAV99LT1 by Onsemi

SBAV99LT1 by Onsemi is a series connected diode with 0.006 us reverse recovery time. It has 70V peak reverse voltage and 0.715A output current, making it ideal for rectification applications in small outline packages. The diode's gull wing terminal form and tin/lead finish enhance its performance in surface mount designs.

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1k+

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Digiode

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Latvia . 5,738 parts In-Stock

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Kulean Microsystems

USA . 5,393 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Corphita

USA . 1,314 parts In-Stock

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UHIMA Technologies

Türkiye . 588 parts In-Stock

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Overview

Elevate your electronic designs with the SBAV99LT1 diode by Onsemi. Known for superior quality and reliability, Onsemi is a trusted manufacturer in the industry. This diode, part of the Diodes & Rectifiers category, offers fast reverse recovery time and high output current capabilities for optimal performance. Its small outline package and surface mount feature make it versatile for a wide range of applications. Experience the value and benefits of this product, providing efficient power dissipation and precise voltage regulation. Choose Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the diodes, making them suitable for various operating conditions.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connection with center tap and 2 elements allows for efficient power distribution and enhanced functionality in circuit designs.

Surface Mount: YES

Surface mount capability enables easy installation and space-saving on PCBs, making it convenient for compact electronic devices.

Maximum Reverse Recovery Time: 0.006 us

Low reverse recovery time ensures fast and efficient operation of the diodes, reducing power loss and improving overall performance.

Package Shape: RECTANGULAR

Rectangular package shape provides compatibility and ease of handling during assembly and installation processes.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers space efficiency and integration in compact devices, ideal for applications with limited space.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures reliable solder connections for secure electrical contact and stable performance over time.

Terminal Position: DUAL

Dual terminal position allows for multiple connection possibilities, enhancing versatility and usability in different circuit setups.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, the diodes can handle significant power loads without overheating, ensuring reliability in operation.

Maximum Time At Peak Reflow Temperature (s): 30

The diodes can withstand peak reflow temperatures for up to 30 seconds, making them suitable for reflow soldering processes in manufacturing.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures proper solder reflow and bonding for secure attachment to PCBs, enhancing overall product quality.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC currents, making these diodes suitable for various power supply and rectification applications.

Maximum Output Current: 0.715 A

High maximum output current rating of 0.715 A enables reliable and stable performance in circuits with varying load requirements, ensuring consistent power delivery.

Terminal Form: GULL WING

Gull wing terminal form provides secure mechanical support and ease of soldering during assembly, ensuring reliable electrical connections in the circuit.

No. of Elements: 2

Having 2 elements in the diode design allows for balanced current distribution and improved efficiency in power flow through the circuit.

Maximum Repetitive Peak Reverse Voltage: 70 V

High maximum repetitive peak reverse voltage rating of 70 V ensures protection against voltage spikes and reverse polarity, enhancing circuit reliability.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and low forward voltage drop, making these diodes ideal for high-speed and high-frequency applications.

Technical Specifications

Diodes & Rectifiers SBAV99LT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Output Current:

.715 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Recovery Time:

.006 us

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBAV99LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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