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SBAV99LT3

Onsemi

SBAV99LT3 by Onsemi

SBAV99LT3 by Onsemi is a series connected diode with a max output current of 0.215A and a max repetitive peak reverse voltage of 70V. It features a small outline package style, making it suitable for applications requiring fast reverse recovery time such as power supplies and battery chargers.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 285,280 parts In-Stock

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Digiode

USA . 2,448 parts In-Stock

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Vyrian

USA . 2,359 parts In-Stock

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2,359

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Problanco Electronics

Mexico . 8,019 parts In-Stock

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SupplyDigital Components

Austria . 4,522 parts In-Stock

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Kulean Microsystems

USA . 3,253 parts In-Stock

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Corphita

USA . 1,812 parts In-Stock

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TANS Electronics

Latvia . 1,059 parts In-Stock

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UHIMA Technologies

Türkiye . 462 parts In-Stock

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Corohmni

South Africa . 151 parts In-Stock

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Overview

Unlock a world of possibilities with the SBAV99LT3 by Onsemi. This high-quality diode offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. From power supplies to signal processing, this versatile diode delivers exceptional value and benefits to customers. Trust in Onsemi's expertise and experience in the industry, and experience the advantages that the SBAV99LT3 can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product durable and resistant to external environmental factors, ensuring a longer lifespan.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements allows for efficient power delivery and precise control, making it ideal for various electronics applications.

Surface Mount: YES

Being surface mountable simplifies the assembly process and saves space on the PCB, making it a convenient choice for compact electronic devices.

Maximum Reverse Recovery Time: 0.006 us

With a very low reverse recovery time, this diode ensures fast switching speeds and minimal reverse current losses, enhancing overall performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and facilitates efficient heat dissipation, contributing to the product's reliability.

No. of Terminals: 3

Having 3 terminals enables versatile connectivity options and flexibility in circuit configurations, making it suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves PCB space and enhances overall system efficiency, making it a practical choice for compact electronic designs.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and reliability, making the product easy to use during assembly and resistant to mechanical stress.

Terminal Position: DUAL

The dual terminal position allows for secure and stable connections, reducing the risk of signal distortion or loss, and enhancing overall performance.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, the diode can handle heavy load conditions without overheating, ensuring long-term reliability.

Maximum Time At Peak Reflow Temperature (s): 30

The specified time at peak reflow temperature of 30 seconds ensures proper soldering and reflow process, maintaining the product's electrical and mechanical integrity.

Peak Reflow Temperature °C: 235

The high peak reflow temperature tolerance of 235 °C allows for reliable and consistent soldering during assembly, ensuring excellent thermal stability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC currents with low forward voltage drop, making it ideal for power supply applications with high efficiency requirements.

Maximum Output Current: 0.215 A

The high maximum output current rating of 0.215 A ensures reliable operation under heavy load conditions, making it suitable for power-intensive applications.

Terminal Form: GULL WING

The gull wing terminal form provides a secure mechanical connection and enhances heat dissipation, improving the product's overall reliability and longevity.

No. of Elements: 2

Having 2 elements allows for improved current handling capacity and reduces voltage drop, making the diode more efficient and reliable in demanding applications.

Maximum Repetitive Peak Reverse Voltage: 70 V

The high maximum repetitive peak reverse voltage rating of 70 V ensures reliable performance in applications with fluctuating voltages, offering a wide range of usability.

Diode Element Material: SILICON

Being made of silicon, the diode element material provides high conductivity, low forward resistance, and stable performance over a wide temperature range, making it a durable and reliable choice for various electronic circuits.

Technical Specifications

Diodes & Rectifiers SBAV99LT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Output Current:

.215 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Recovery Time:

.006 us

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBAV99LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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