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SBAV199LT3G

Onsemi

SBAV199LT3G by Onsemi

SBAV199LT3G by Onsemi is a series connected diode with 2 elements, featuring a max forward voltage of 0.9V and output current of 0.215A. Ideal for rectification applications, it operates b/w -65°C to 150°C, meeting AEC-Q101 standards for automotive use.

Median Price

$0.210

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 35,006 parts In-Stock

1+ parts

$0.210

100+ parts

$0.072

1k+ parts

$0.046

10k+ parts

$0.030

35,006

$0.210

$0.072

$0.046

$0.030

Flip Electronics (Authorized)

USA . 5,159 parts In-Stock

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5,159

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Digiode

USA . 1,443 parts In-Stock

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$0.104

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1,443

$0.104

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Vyrian

USA . 2,332 parts In-Stock

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$0.110

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2,332

$0.110

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ComSIT Distribution GmbH

Germany . 6,003 parts In-Stock

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6,003

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Flip Electronics

USA . 5,159 parts In-Stock

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5,159

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Cyclops Electronics Ltd

UK . 140 parts In-Stock

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140

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Distributors (Availability)

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Corphita

USA . 2,465 parts In-Stock

1+ parts

$0.099

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2,465

$0.099

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Corohmni

South Africa . 245 parts In-Stock

1+ parts

$0.110

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245

$0.110

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RC Electronics

USA . 8,910 parts In-Stock

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8,910

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Problanco Electronics

Mexico . 7,956 parts In-Stock

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Kulean Microsystems

USA . 6,052 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,559 parts In-Stock

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5,559

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UHIMA Technologies

Türkiye . 887 parts In-Stock

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SupplyDigital Components

Austria . 602 parts In-Stock

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TANS Electronics

Latvia . 544 parts In-Stock

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544

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Overview

Experience the superior quality and performance of the SBAV199LT3G by Onsemi, a leading manufacturer in the industry of Diodes & Rectifiers. This small outline package with dual terminals offers a series connected, center tap configuration perfect for various applications. With a maximum power dissipation of 0.225 W and maximum reverse recovery time of 3 us, this rectifier diode ensures reliable operation even in extreme temperatures ranging from -65°C to 150°C. Trust Onsemi's expertise and innovation to deliver value and efficiency to your electronic projects. Elevate your design with the SBAV199LT3G and experience unparalleled benefits today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Allows for efficient power distribution and improves overall performance of the product.

Maximum Reverse Recovery Time: 3 us

Ensures fast switching speeds and reduces power loss in the circuit.

Package Shape: RECTANGULAR

Facilitates easier integration and mounting in electronic circuits.

Maximum Operating Temperature: 150 °C

Ensures stable performance even in high-temperature environments.

Minimum Operating Temperature: -65 °C

Provides a wide operating temperature range for versatility and reliability.

Maximum Power Dissipation: 0.225 W

Allows for efficient power handling and prevents overheating.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, ensuring reliable performance in power supply applications.

Technical Specifications

Diodes & Rectifiers SBAV199LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236AA

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.215 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Recovery Time:

3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SBAV199LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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