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SBAV70LT3G

Onsemi

SBAV70LT3G by Onsemi

SBAV70LT3G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.006 us. With a max forward voltage of 0.715 V and output current of 0.1 A, it is ideal for rectification applications in automotive electronics due to its AEC-Q101 reference standard compliance.

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Arrow

USA . 17,391 parts In-Stock

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$0.036

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$0.035

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$0.035

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$0.035

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$0.035

Mouser Electronics

USA . 36,107 parts In-Stock

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$0.170

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$0.067

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$0.042

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$0.032

36,107

$0.170

$0.067

$0.042

$0.032

Rochester

USA . 152,278 parts In-Stock

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-

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$0.019

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DigiKey

USA . 152,278 parts In-Stock

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Verical

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Chip1Stop

Japan . 6,614 parts In-Stock

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Digiode

USA . 1,232 parts In-Stock

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$0.024

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Nova Conductors

Japan . 100 parts In-Stock

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$0.064

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Chip Stock

USA . 215,500 parts In-Stock

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NexGen Digital

USA . 170,000 parts In-Stock

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Vyrian

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NAC Semi

USA . 110,000 parts In-Stock

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J2 Sourcing AB

Sweden . 70,000 parts In-Stock

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Flip Electronics

USA . 28,851 parts In-Stock

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A2Z Electronics, Inc.

USA . 20,000 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 7,816 parts In-Stock

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Ampacity Inc.

Singapore . 130,345 parts In-Stock

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Semicontronic

India . 130,331 parts In-Stock

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Corphita

USA . 465 parts In-Stock

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Corohmni

South Africa . 207 parts In-Stock

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Component Stockers USA

USA . 397,230 parts In-Stock

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Argo Parts USA

USA . 647 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 158 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Kepictronics

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Authorized Procurement Solutions

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Lixinc

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TANS Electronics

Latvia . 6,472 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

Austria . 820 parts In-Stock

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UHIMA Technologies

Türkiye . 605 parts In-Stock

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Overview

Discover the superior performance and reliability of the SBAV70LT3G diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are essential for a wide range of applications. With Onsemi's SBAV70LT3G, customers can expect unmatched value and benefits, including a common cathode configuration, small outline package style, and fast reverse recovery time. Whether you're designing automotive electronics or industrial equipment, this diode offers exceptional efficiency and durability to meet your needs. Upgrade your projects with the innovative technology of Onsemi's SBAV70LT3G diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials offer good durability and can withstand a wide range of operating conditions, making this diode a reliable choice for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and helps in managing power distribution effectively.

Maximum Reverse Recovery Time: 0.006 us

Fast reverse recovery time ensures minimal power loss and high efficiency in switching operations.

Surface Mount: YES

Surface mount capability enables easy and convenient mounting on circuit boards, saving space and simplifying assembly processes.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for the diode to be used in a wide range of environments and applications without risking damage.

Maximum Power Dissipation: 0.225 W

With a relatively high power dissipation capacity, this diode can handle moderate power loads effectively, ensuring stable performance.

Maximum Forward Voltage (VF): 0.715 V

Low forward voltage drop ensures minimal power loss and efficient energy conversion in forward bias conditions.

Maximum Output Current: 0.1 A

Able to handle a maximum output current of 0.1 A, making it suitable for low to moderate current applications without risking overheating or damage.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating ensures reliable operation in reverse bias conditions, offering protection against voltage spikes and transient events.

Technical Specifications

Diodes & Rectifiers SBAV70LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.006 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SBAV70LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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