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SBAV70WT1G

Onsemi

SBAV70WT1G by Onsemi

SBAV70WT1G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.006 us and a max reverse current of 1 uA. Ideal for rectification applications, this small outline diode operates b/w -55 to 150 °C and has a peak reflow temperature of 260C.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Newark

USA . 855 parts In-Stock

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$0.198

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855

$0.198

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Mouser Electronics

USA . 16,836 parts In-Stock

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$0.210

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$0.078

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$0.049

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16,836

$0.210

$0.078

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$0.038

Avnet

USA . 5,901,000 parts In-Stock

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DigiKey

USA . 64,701 parts In-Stock

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Arrow

USA . 60,000 parts In-Stock

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Chip1Stop

Japan . 57,000 parts In-Stock

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Verical

USA . 45,000 parts In-Stock

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Master Electronics

USA . 45,000 parts In-Stock

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Farnell

UK . 27,000 parts In-Stock

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Rochester

USA . 5,500 parts In-Stock

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$0.024

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Element14

Singapore . 40 parts In-Stock

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$0.116

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Distributors (In-Stock)

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Digiode

USA . 2,328 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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$0.089

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650

$0.089

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Bristol Electronics

USA . 2,127,000 parts In-Stock

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$0.150

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$0.075

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$0.030

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$0.019

2,127,000

$0.150

$0.075

$0.030

$0.019

TME

Poland . 2,770 parts In-Stock

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$0.170

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$0.065

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$0.050

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Flip Electronics

USA . 1,000,000 parts In-Stock

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NAC Semi

USA . 48,000 parts In-Stock

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IBS Electronics

USA . 39,000 parts In-Stock

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Vyrian

USA . 30,674 parts In-Stock

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Semtec, LLC

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Sensible Micro Corp

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LWI Electronics Inc

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Cyclops Electronics Ltd

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Ampacity Inc.

Singapore . 28,013 parts In-Stock

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$0.011

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Semicontronic

India . 27,785 parts In-Stock

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Corphita

USA . 839 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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Modulus Dynamics

Lithuania . 3,323 parts In-Stock

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Argo Parts USA

USA . 4,512 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Aztec Data Supply Inc.

USA . 184 parts In-Stock

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$0.139

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Perfect Parts

USA . 17,192,706 parts In-Stock

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GreenTree Electronics

Israel . 391,290 parts In-Stock

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Authorized Procurement Solutions

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S.R.D Solutions

India . 117,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Glotronic Ltd.

UK . 67,200 parts In-Stock

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Continental Prestige Electronics

USA . 45,205 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Epart123

USA . 18,000 parts In-Stock

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Eastek

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 6,080 parts In-Stock

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Kulean Microsystems

USA . 4,968 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 3,956 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

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Lixinc

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Robosynatics

Brazil . 350 parts In-Stock

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$4.874

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Lucentia Tech

USA . 350 parts In-Stock

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$4.874

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$4.874

Metaverse IC Inc.

Canada . 300 parts In-Stock

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Kepictronics

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Overview

Discover the high-quality SBAV70WT1G by Onsemi, designed for a wide range of applications in the Diodes & Rectifiers category. With its common cathode configuration and small outline package style, this diode offers exceptional value and benefits to customers. From its fast reverse recovery time to its low reverse current, this product ensures superior performance and reliability. Trust Onsemi's expertise and experience in semiconductor manufacturing, and elevate your projects with the SBAV70WT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures a lightweight and durable product, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient current flow and voltage regulation.

Surface Mount: YES

Being surface mountable makes installation easier, especially for compact setups where space is limited.

Maximum Reverse Recovery Time: 0.006 us

The ultra-fast reverse recovery time ensures minimal energy loss and efficient operation.

Maximum Reverse Current: 1 uA

With a low reverse current, this product offers excellent reverse leakage protection.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and secure mounting in electronic circuits.

Reverse Test Voltage: 100 V

A high reverse test voltage adds to the product's reliability and safety in handling reverse currents.

No. of Terminals: 3

Having 3 terminals enables a secure and stable connection, reducing the risk of loose connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for efficient component layout on a PCB.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand harsh environments without performance degradation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable functionality even in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and excellent solderability for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer versatility in installation and allow for various connection options based on the application.

Maximum Power Dissipation: 0.2 W

The low power dissipation ensures efficient energy usage and minimal heat generation for enhanced reliability.

Minimum Breakdown Voltage: 100 V

A high minimum breakdown voltage offers protection against voltage surges and ensures stable operation under varying conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures that the product remains intact during soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for secure soldering without damaging the diode.

Reference Standard: AEC-Q101

Compliant with AEC-Q101 standards, this product meets automotive industry requirements for quality and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts alternating current (AC) to direct current (DC) with minimal voltage drop.

Maximum Forward Voltage (VF): 1.25 V

With a low forward voltage drop, this diode ensures minimal power loss during operation.

Maximum Output Current: 0.1 A

Capable of handling up to 0.1 Ampere of current, this diode is suitable for low to medium power applications.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical stability and facilitates easy PCB mounting for secure connections.

No. of Elements: 2

With 2 elements, this diode offers increased efficiency and reliability in current regulation and voltage rectification.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating provides protection against reverse voltage spikes and ensures long-term reliability.

Maximum Non Repetitive Peak Forward Current: 2 A

With a high non-repetitive peak forward current rating, this diode can handle occasional current spikes without damage.

Diode Element Material: SILICON

Made of silicon, this diode element material offers high durability, temperature resistance, and stable electrical properties for long-lasting performance.

Technical Specifications

Diodes & Rectifiers SBAV70WT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

100 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.006 us

Reverse Test Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBAV70WT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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