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SBAV70LT3

Onsemi

SBAV70LT3 by Onsemi

SBAV70LT3 by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.006 us. With a max output current of 0.2 A and package style in small outline, it is ideal for rectification applications in compact electronic devices requiring fast switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,863 parts In-Stock

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Electronic Expediters

USA . 1,800 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 3,588 parts In-Stock

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Corphita

USA . 2,416 parts In-Stock

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Kulean Microsystems

USA . 502 parts In-Stock

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Problanco Electronics

Mexico . 482 parts In-Stock

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TANS Electronics

Latvia . 385 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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Overview

Discover the SBAV70LT3 by Onsemi, a top-quality diode with common cathode configuration and two elements in a small outline package. Ideal for a wide range of applications, this rectifier diode offers fast reverse recovery time and a maximum output current of 0.2 A. Manufactured by Onsemi, known for their cutting-edge technology and reliable products, the SBAV70LT3 provides customers with exceptional value, efficiency, and performance. Upgrade your electronic designs with this versatile diode and experience the benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for various environments.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easy integration into circuits, while the 2 elements provide improved functionality.

Surface Mount: YES

Surface mount capability enables easy installation on circuit boards, saving space and simplifying manufacturing processes.

Maximum Reverse Recovery Time: 0.006 us

Low reverse recovery time ensures efficient performance, making this diode an excellent choice for fast-switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards, optimizing space utilization.

No. of Terminals: 3

3 terminals provide multiple connection points, improving flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style minimizes footprint, ideal for compact electronic devices.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish facilitates soldering and ensures reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options in various circuit layouts.

Maximum Power Dissipation: 0.225 W

High power dissipation capability ensures the diode can handle demanding applications without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures proper soldering and prevents damage to the diode.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance ensures the diode can withstand the soldering process without deterioration.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting alternating current to direct current, making it versatile in power supply applications.

Maximum Output Current: 0.2 A

High output current rating allows the diode to handle significant electrical loads, ensuring reliable performance.

Terminal Form: GULL WING

Gull wing terminal form simplifies automated assembly processes, improving manufacturing efficiency.

No. of Elements: 2

2 elements enhance the diode's functionality, enabling it to perform more complex tasks within circuits.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability, making the diode a durable and long-lasting component.

Technical Specifications

Diodes & Rectifiers SBAV70LT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Reverse Recovery Time:

.006 us

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBAV70LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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