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R3710-CFAB-E1T

Onsemi

R3710-CFAB-E1T by Onsemi

R3710-CFAB-E1T by Onsemi is a 25-terminal DSP chip with max clock freq of 4.218 MHz, operating temp range of 0-40 °C, and low power mode. Ideal for commercial applications requiring CMOS technology and fixed-point format for digital signal processing tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,853 parts In-Stock

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Digiode

USA . 1,333 parts In-Stock

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Problanco Electronics

Mexico . 4,565 parts In-Stock

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SupplyDigital Components

Austria . 3,588 parts In-Stock

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TANS Electronics

Latvia . 2,908 parts In-Stock

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Kulean Microsystems

USA . 2,677 parts In-Stock

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Corphita

USA . 2,333 parts In-Stock

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Corohmni

South Africa . 423 parts In-Stock

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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Overview

Enhance your digital signal processing capabilities with the R3710-CFAB-E1T by Onsemi. Manufactured with precision and expertise, this DSP offers unparalleled quality and performance for a wide range of applications. From audio processing to telecommunications, this versatile chip carrier package delivers exceptional value and benefits to customers seeking reliable and efficient solutions. Elevate your projects with the advanced technology and innovative features of the R3710-CFAB-E1T, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides durability and protection for the DSP, ensuring long-lasting performance.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into various electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space and easy placement on circuit boards.

Maximum Clock Frequency: 4.218 MHz

High maximum clock frequency enables fast processing speeds, making this DSP suitable for real-time signal processing applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall efficiency of the DSP.

Nominal Supply Voltage: 1.25 V

Low nominal supply voltage helps in reducing power consumption and heat generation, contributing to energy efficiency.

Technical Specifications

Digital Signal Processors (DSPs) R3710-CFAB-E1T attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Onsemi

Specs

Barrel Shifter:

NO

Boundary Scan:

NO

Maximum Clock Frequency:

4.218 MHz

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

R-PBCC-B25

Length:

4.57 mm

Low Power Mode:

YES

No. of Terminals:

25

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BCC

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Seated Height:

1.52 mm

Nominal Supply Voltage:

1.25 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

BOTTOM

Width:

3.12 mm

Peripheral IC Type:

Trade Compliance

R3710-CFAB-E1T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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