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PZT751T1

Onsemi

PZT751T1 by Onsemi

PZT751T1 by Onsemi is a PNP BJT with 60V VCEO, 2A IC, and 75MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.8W in a compact SOT-223 package. Suitable for surface mount designs requiring high DC current gain and temperature resistance up to 150°C.

Median Price

$1.854

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Master Electronics

USA . 747 parts In-Stock

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$3.400

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$1.100

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747

$3.400

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Rochester

USA . 611 parts In-Stock

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$0.308

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$0.256

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$0.228

611

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$0.308

$0.256

$0.228

Distributors (In-Stock)

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Voyager Components

USA . 922 parts In-Stock

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$0.081

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$0.081

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$0.081

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922

$0.081

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$0.081

Digiode

USA . 733 parts In-Stock

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$0.240

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Vyrian

USA . 122 parts In-Stock

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TEDSS.com

USA . 885 parts In-Stock

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$0.500

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$0.240

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Bristol Electronics

USA . 3,750 parts In-Stock

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$0.600

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$0.300

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$0.120

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$0.090

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Electronics Depot

USA . 10,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ComSIT Distribution GmbH

Germany . 3,262 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Odintec Ltd.

Israel . 3,000 parts In-Stock

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Dan-Mar Components

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Component Sense

UK . 2,896 parts In-Stock

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R&J Components

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Microfarads

USA . 709 parts In-Stock

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Standard Data Resources

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First Choice Components Inc.

USA . 536 parts In-Stock

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Semi Source

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Elcom Components

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Prism Electronics

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Zilex Electronics Inc.

Canada . 145 parts In-Stock

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Speed Components Ltd

Israel . 33 parts In-Stock

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Corohmni

South Africa . 133 parts In-Stock

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$0.081

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Corphita

USA . 2,175 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Cyclops Electronics Ltd (Excess)

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SupplyDigital Components

Austria . 8,032 parts In-Stock

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Assy Fe

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TANS Electronics

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Kulean Microsystems

USA . 1,353 parts In-Stock

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Continental Prestige Electronics

USA . 712 parts In-Stock

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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Problanco Electronics

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Overview

Enhance your electronic projects with the PZT751T1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor solutions, this PNP transistor is perfect for various applications. With its single configuration and small outline package style, this transistor is easy to use and versatile. Whether you're a hobbyist or a professional, the PZT751T1 provides value, benefits, and advantages that will take your projects to the next level. Trust in Onsemi's expertise and choose the PZT751T1 for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing versatility in circuit design.

Configuration: SINGLE

Simplified design and easy integration into circuits as a standalone component.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Terminal Form: GULL WING

Facilitates secure soldering connections on the PCB, ensuring reliability in operation.

Maximum Power Dissipation (Abs): 0.8 W

Can handle moderate power dissipation levels, suitable for a wide range of low to medium power applications.

Package Style (Meter): SMALL OUTLINE

Compact form factor saves space on the PCB, ideal for designs with size constraints.

Minimum DC Current Gain (hFE): 40

Provides consistent and reliable amplification of signals in various circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments, increasing the range of applications for the transistor.

Maximum Collector-Emitter Voltage: 60 V

Withstands high voltage levels, ensuring reliable performance in diverse circuit configurations.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties for improved transistor performance.

Maximum Collector Current (IC): 2 A

Capable of handling moderate to high current levels, suitable for various application requirements.

Terminal Finish: TIN LEAD

Ensures good solderability and conductivity for reliable connections in the circuit.

Terminal Position: DUAL

Provides flexibility in circuit layout and connection options for ease of integration.

Case Connection: COLLECTOR

Simplified connection to the collector terminal for convenient circuit design and troubleshooting.

Peak Reflow Temperature °C: 235

Capability to withstand high reflow temperatures during assembly process without affecting performance.

Nominal Transition Frequency (fT): 75 MHz

High transition frequency ensures fast response times in signal amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT751T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT751T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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