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PZT751T3

Onsemi

PZT751T3 by Onsemi

PZT751T3 by Onsemi is a PNP BJT with 60V VCEO, 2A IC, and 75MHz fT. Ideal for small signal applications in electronics due to its high DC current gain of 40 (hFE) and compact Gull Wing package design. Operates up to 150 °C making it suitable for various temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,423 parts In-Stock

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Digiode

USA . 324 parts In-Stock

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324

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SupplyDigital Components

Austria . 8,400 parts In-Stock

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TANS Electronics

Latvia . 7,225 parts In-Stock

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Kulean Microsystems

USA . 4,839 parts In-Stock

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Problanco Electronics

Mexico . 2,297 parts In-Stock

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UHIMA Technologies

Türkiye . 503 parts In-Stock

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Corphita

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Corohmni

South Africa . 280 parts In-Stock

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Overview

Boost your electronics projects with the reliable PZT751T3 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance in their Small Signal Bipolar Junction Transistors (BJTs). The PZT751T3 is a versatile PNP transistor with a single configuration, making it ideal for a wide range of applications. With its compact rectangular package and gull wing terminals, this transistor offers easy installation and efficient operation. Trust Onsemi to deliver superior products like the PZT751T3 that provide exceptional value and benefits to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, suitable for various applications where weight and durability are important.

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power applications and can be easily integrated into electronic circuits.

Configuration: SINGLE

Single configuration transistors are simple to use and suitable for basic electronic circuits.

Surface Mount: YES

Surface mount transistors are easy to solder and save space on the circuit board.

Package Shape: RECTANGULAR

Rectangular package shapes are common and easy to handle during assembly.

Terminal Form: GULL WING

Gull wing terminals provide good solder joint reliability and are suitable for surface mount applications.

No. of Terminals: 4

Having 4 terminals allows for easy connectivity in the circuit.

Maximum Power Dissipation (Abs): 0.8 W

This transistor can handle power up to 0.8 W, suitable for low-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board.

Minimum DC Current Gain (hFE): 40

With a minimum hFE of 40, this transistor provides consistent and reliable amplification.

Maximum Operating Temperature: 150 °C

The transistor can operate at a maximum temperature of 150 °C, suitable for various environments.

Maximum Collector-Emitter Voltage: 60 V

This transistor can handle voltages up to 60 V, making it suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Silicon transistors are reliable and widely used in electronic circuits.

Maximum Collector Current (IC): 2 A

With a maximum current rating of 2 A, this transistor is suitable for low to medium current applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures a stable electrical connection.

Terminal Position: DUAL

Dual terminal position allows for easy connectivity in the circuit.

Case Connection: COLLECTOR

Having the case connected to the collector simplifies the connection in some circuit designs.

Nominal Transition Frequency (fT): 75 MHz

With a nominal transition frequency of 75 MHz, this transistor can handle higher frequency signals effectively.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT751T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT751T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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