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PN4250

Onsemi

PN4250 by Onsemi

The Onsemi PN4250 is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.6W, hFE of 250, and operates at up to 150 °C. With a max VCE of 40V and IC of 0.1A, it is suitable for various electronic circuits requiring high gain and low power consumption.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 16,623 parts In-Stock

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Rochester

USA . 13,943 parts In-Stock

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$0.053

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$0.044

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$0.039

13,943

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$0.044

$0.039

DigiKey

USA . 13,943 parts In-Stock

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$0.070

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Verical

USA . 9,360 parts In-Stock

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$0.049

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Distributors (In-Stock)

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Vyrian

USA . 2,286 parts In-Stock

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Digiode

USA . 2,514 parts In-Stock

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$0.041

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Freelance Electronics

USA . 135 parts In-Stock

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$0.048

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Ace Electronics

USA . 1,294 parts In-Stock

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$2.000

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Forefront Electronics and Design

USA . 2 parts In-Stock

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$12.250

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Chip Stock

USA . 29,000 parts In-Stock

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DF Sales Co.

USA . 21,400 parts In-Stock

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DF Sales Co.

USA . 21,400 parts In-Stock

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Microfarads

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

USA . 2,000 parts In-Stock

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Dan-Mar Components

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Inventory MP

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Electronics Depot

USA . 1,945 parts In-Stock

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R&J Components

USA . 1,350 parts In-Stock

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Atlantic Semiconductor

USA . 1,255 parts In-Stock

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Electronic Expediters

USA . 895 parts In-Stock

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Anansix

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Prism Electronics

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EMSNET

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Pride Electronics

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Mil-Aero Solutions, Inc.

USA . 79 parts In-Stock

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Resion

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Manoshevitz Elec. Sales

Israel . 23 parts In-Stock

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MISTER SPROCKETS

USA . 20 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 4 parts In-Stock

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Corphita

USA . 1,853 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,447 parts In-Stock

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Continental Prestige Electronics

USA . 14,758 parts In-Stock

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Metaverse IC Inc.

Canada . 9,916 parts In-Stock

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Kulean Microsystems

USA . 7,930 parts In-Stock

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SupplyDigital Components

Austria . 7,346 parts In-Stock

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TANS Electronics

Latvia . 3,453 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 959 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 714 parts In-Stock

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Problanco Electronics

Mexico . 540 parts In-Stock

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Perfect Parts

USA . 336 parts In-Stock

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Overview

Unleash the power of innovation with the PN4250 by Onsemi! As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers top-notch quality and reliability for your amplifier applications. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 250, this PNP transistor offers unmatched performance and efficiency. Say goodbye to limitations and hello to endless possibilities with the PN4250 - your ultimate solution for cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for long-term use in various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into various electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy integration and placement within circuit boards or other components.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and make it easier for soldering onto PCBs for reliable performance.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, this transistor can handle high power loads without overheating, ensuring reliability in demanding applications.

Minimum DC Current Gain (hFE): 250

A high minimum DC current gain of 250 ensures consistent and reliable amplification performance in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40V allows for flexibility in circuit design and compatibility with various power sources.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its stability and performance in electronic devices, ensuring the transistor's longevity and efficiency.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current loads in amplifier circuits without compromising performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides excellent solderability and ensures a reliable electrical connection, making the transistor easy to integrate into circuits.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB design and layout, allowing for easy connection and integration within circuit boards.

Nominal Transition Frequency (fT): 40 MHz

A high nominal transition frequency of 40MHz enables fast switching and response times in amplifier circuits, ensuring efficient signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN4250 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PN4250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5905-01-446-7279, 5905014467279

NIIN

014467279

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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