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PN4275

Onsemi

PN4275 by Onsemi

The Onsemi PN4275 is a NPN BJT transistor with max VCEsat of 0.2V, hFE of 18, and IC of 0.1A. Ideal for switching applications, it operates at up to 150 °C with a transition frequency of 400MHz. Its cylindrical package has through-hole terminals and tin/lead finish.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 50 parts In-Stock

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$0.080

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$0.060

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$0.050

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50

$0.080

$0.060

$0.050

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American Microsemiconductor Inc.

USA . 16 parts In-Stock

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$0.360

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16

$0.360

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Vyrian

USA . 2,638 parts In-Stock

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Connector Distribution Corp

USA . 2,000 parts In-Stock

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Right Parts Inc.

USA . 2,000 parts In-Stock

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Anansix

USA . 1,944 parts In-Stock

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Bristol Electronics

USA . 1,520 parts In-Stock

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$0.150

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$0.045

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$0.045

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Digiode

USA . 1,356 parts In-Stock

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1,356

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Prism Electronics

USA . 604 parts In-Stock

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Electronic Expediters

USA . 542 parts In-Stock

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542

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Resion

USA . 200 parts In-Stock

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R&J Components

USA . 146 parts In-Stock

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Sunrise Surplus Inc.

USA . 43 parts In-Stock

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Zilex Electronics Inc.

Canada . 20 parts In-Stock

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Corohmni

South Africa . 118 parts In-Stock

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$0.080

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118

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Ampacity Inc.

Singapore . 488 parts In-Stock

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$49.050

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488

$49.050

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QUARKTWIN TECHNOLOGY LTD

USA . 18,628 parts In-Stock

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Problanco Electronics

Mexico . 6,323 parts In-Stock

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Kulean Microsystems

USA . 5,793 parts In-Stock

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SupplyDigital Components

Austria . 4,399 parts In-Stock

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TANS Electronics

Latvia . 3,853 parts In-Stock

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Supply Digital

USA . 1,644 parts In-Stock

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UHIMA Technologies

Türkiye . 801 parts In-Stock

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Corphita

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Perfect Parts

USA . 553 parts In-Stock

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553

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Overview

Enhance your electronic projects with the high-quality PN4275 Small Signal Bipolar Junction Transistor from Onsemi. Manufactured by a trusted industry leader, this NPN transistor offers reliable switching performance and a low VCEsat of 0.2V, making it ideal for a wide range of applications. With a compact cylindrical package and superior thermal dissipation capabilities, the PN4275 ensures efficient operation and long-lasting reliability. Upgrade your designs with this versatile component and experience the benefits of enhanced performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their ease of use and versatility.

Configuration: SINGLE

Simplifies circuit design and implementation for basic switching applications.

Transistor Application: SWITCHING

Well-suited for applications that require fast switching speeds and low power dissipation.

Maximum VCEsat: 0.2 V

Low saturation voltage helps minimize power loss and improve efficiency in switching operations.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various types of circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in circuit boards.

Maximum Power Dissipation (Abs): 0.6 W

Can handle moderate power dissipation levels, making it suitable for low to medium power applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers good heat dissipation properties and ease of handling.

Minimum DC Current Gain (hFE): 18

Sufficient DC current gain ensures stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively within a wide temperature range, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 15 V

Provides a high breakdown voltage, offering protection against overvoltage conditions.

Transistor Element Material: SILICON

Silicon-based material ensures high performance and reliability in electronic applications.

Maximum Turn On Time (ton): 12 ns

Fast turn-on time enables quick response in switching operations, improving overall efficiency.

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector current levels, suitable for low power applications.

Maximum Turn Off Time (toff): 12 ns

Fast turn-off time ensures rapid switching transitions, reducing power loss in circuits.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish offers good solderability and long-term reliability in circuit connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and soldering in circuit boards.

Nominal Transition Frequency (fT): 400 MHz

High transition frequency enables high-speed operations in RF and digital applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN4275 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH SPEED SATURATED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

18

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

12 ns

Maximum Turn On Time (ton):

12 ns

Maximum VCEsat:

.2 V

Trade Compliance

PN4275 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-275-6580, 5961012756580

NIIN

012756580

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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