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PN4249

Onsemi

PN4249 by Onsemi

The Onsemi PN4249 is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.6W, hFE of 100, and operates up to 150°C. With a max VCE of 60V and IC of 0.1A, it's suitable for various electronic circuits requiring high gain and low power consumption.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 42,834 parts In-Stock

1+ parts

-

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$0.053

1k+ parts

$0.044

10k+ parts

$0.039

42,834

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$0.053

$0.044

$0.039

DigiKey

USA . 42,834 parts In-Stock

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$0.070

42,834

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$0.070

Farnell

UK . 42,834 parts In-Stock

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$0.049

42,834

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$0.049

Verical

USA . 12,178 parts In-Stock

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$0.049

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Distributors (In-Stock)

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Digiode

USA . 1,996 parts In-Stock

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$0.041

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$0.041

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American Microsemiconductor Inc.

USA . 20 parts In-Stock

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$1.050

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20

$1.050

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Chip Stock

USA . 61,000 parts In-Stock

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DigiKey Marketplace

USA . 42,832 parts In-Stock

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Vyrian

USA . 32,542 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 10,000 parts In-Stock

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Eagle Technology Solutions

USA . 6,000 parts In-Stock

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Anansix

USA . 1,002 parts In-Stock

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Microfarads

USA . 400 parts In-Stock

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400

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Bristol Electronics

USA . 320 parts In-Stock

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$0.150

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$0.075

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320

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$0.075

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R&J Components

USA . 226 parts In-Stock

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Inland Empire Components Inc.

USA . 100 parts In-Stock

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100

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Fibra_Brandt Electronic GMBH

Germany . 93 parts In-Stock

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Nova Conductors

Japan . 56 parts In-Stock

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Prism Electronics

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LittleDiode

UK . 20 parts In-Stock

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Resion

USA . 4 parts In-Stock

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LWI Electronics Inc

India . 2 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 892 parts In-Stock

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$0.039

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892

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Corohmni

South Africa . 261 parts In-Stock

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$0.043

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Component Stockers USA

USA . 678 parts In-Stock

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$99.990

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Continental Prestige Electronics

USA . 42,832 parts In-Stock

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$0.052

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QUARKTWIN TECHNOLOGY LTD

USA . 29,248 parts In-Stock

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Metaverse IC Inc.

Canada . 19,193 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 3,571 parts In-Stock

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TANS Electronics

Latvia . 2,581 parts In-Stock

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Problanco Electronics

Mexico . 2,528 parts In-Stock

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Supply Digital

USA . 1,163 parts In-Stock

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UHIMA Technologies

Türkiye . 698 parts In-Stock

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698

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SupplyDigital Components

Austria . 455 parts In-Stock

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Argo Parts USA

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Microchip USA

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unleash the power of innovation with the PN4249 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that sets the standard for excellence in amplifier applications. Manufactured with precision and expertise, this PNP transistor offers unparalleled performance and reliability. With a high DC current gain and maximum power dissipation, the PN4249 is designed to exceed expectations. Ideal for a variety of electronic projects, this transistor provides customers with the value, benefits, and advantages they need to bring their ideas to life. Elevate your designs with the PN4249 from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material ensures durability and reliability, making this transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits requiring PNP transistors, offering versatility for different design requirements.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor provides the necessary performance and characteristics for amplification tasks.

Maximum Power Dissipation: 0.6 W

With a high maximum power dissipation of 0.6 W, this transistor can handle moderate power levels without overheating, ensuring stable operation.

Maximum Collector-Emitter Voltage: 60 V

A high maximum collector-emitter voltage of 60 V allows for use in a wide range of circuits and applications without the risk of voltage breakdown.

Nominal Transition Frequency: 40 MHz

The high nominal transition frequency of 40 MHz indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN4249 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PN4249 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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