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PCS3I8504AG-08CR

Onsemi

PCS3I8504AG-08CR by Onsemi

PCS3I8504AG-08CR clock generator by Onsemi operates at 50 MHz max output frequency, with a supply voltage range of 3V to 3.6V. Ideal for industrial applications, this CMOS technology device features a small outline package with dual terminals and nickel palladium gold finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,432 parts In-Stock

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Component Stockers USA

USA . 446 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,103 parts In-Stock

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TANS Electronics

Latvia . 5,110 parts In-Stock

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SupplyDigital Components

Austria . 1,848 parts In-Stock

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Kulean Microsystems

USA . 1,476 parts In-Stock

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UHIMA Technologies

Türkiye . 706 parts In-Stock

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Corphita

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Microchip USA

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Overview

Elevate your electronic devices with the PCS3I8504AG-08CR by Onsemi, a top-quality clock generator designed to enhance performance and reliability. As a trusted manufacturer in the industry, Onsemi delivers innovative solutions for a wide range of applications. With its compact design and advanced technology, this clock generator offers customers unparalleled value and benefits. Say goodbye to downtime and hello to seamless operation with the PCS3I8504AG-08CR, the perfect choice for all your timing needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the clock generator.

Surface Mount: YES

Allows for easy and secure installation onto a circuit board, saving space and reducing assembly time.

Maximum Supply Voltage: 3.6 V

Supports a wide range of supply voltages, making it versatile and compatible with different systems.

Maximum Output Clock Frequency: 50 MHz

Provides a high-frequency output signal, suitable for various applications that require precise timing.

Nominal Supply Voltage: 3.3 V

Operates efficiently at a commonly used supply voltage, ensuring compatibility with standard power sources.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing the overall performance of the clock generator.

Technical Specifications

Clock Generators PCS3I8504AG-08CR attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

50 MHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Nominal Primary Clock/Crystal Frequency:

27 MHz

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Peripheral IC Type:

Trade Compliance

PCS3I8504AG-08CR Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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