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NZT749

Onsemi

NZT749 by Onsemi

NZT749 by Onsemi is a PNP BJT transistor with 4 terminals, ideal for switching applications. It has a hFE of 65 and can handle up to 4A of collector current at 25V. With a transition frequency of 75MHz, it is suitable for surface mount designs requiring high-speed switching capabilities.

Median Price

$0.267

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 4,980 parts In-Stock

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-

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$0.277

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$0.230

10k+ parts

$0.205

4,980

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$0.277

$0.230

$0.205

Verical

USA . 2,500 parts In-Stock

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$0.257

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$0.257

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Digiode

USA . 2,752 parts In-Stock

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$0.217

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$0.217

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Vyrian

USA . 2,177 parts In-Stock

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$0.228

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$0.228

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DigiKey Marketplace

USA . 4,980 parts In-Stock

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Electronics Depot

USA . 1,989 parts In-Stock

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Corphita

USA . 2,480 parts In-Stock

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$0.205

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$0.205

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Corohmni

South Africa . 239 parts In-Stock

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$0.228

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239

$0.228

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Andel Nordic

Denmark . 3,919 parts In-Stock

1+ parts

$2.083

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$2.000

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$2.000

3,919

$2.083

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$2.000

$2.000

Kepictronics

USA . 27,860 parts In-Stock

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Problanco Electronics

Mexico . 7,911 parts In-Stock

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Kulean Microsystems

USA . 7,453 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,378 parts In-Stock

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Continental Prestige Electronics

USA . 4,980 parts In-Stock

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$0.270

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Supply Digital

USA . 2,251 parts In-Stock

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TANS Electronics

Latvia . 1,106 parts In-Stock

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SupplyDigital Components

Austria . 1,090 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 79 parts In-Stock

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Overview

Experience the power of innovation with the NZT749 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader Onsemi, this PNP transistor offers unparalleled reliability and performance in a compact rectangular package. Ideal for a wide range of applications, the NZT749 provides customers with seamless operation and efficiency, making it the ultimate choice for your electronic needs. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects. Elevate your designs with the NZT749 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation for safe and reliable operation.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplifies circuit design by using a single transistor.

Transistor Application: SWITCHING

Designed for efficient switching applications.

Surface Mount: YES

Easy to mount on PCBs, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

Helps in efficient utilization of space on the PCB.

No. of Terminals: 4

Provides necessary connections for the transistor to function effectively.

Minimum DC Current Gain (hFE): 65

Ensures stable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 25 V

Can withstand high voltage levels without breakdown.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability.

Maximum Collector Current (IC): 4 A

Capable of handling high current loads in the circuit.

Terminal Position: DUAL

Allows for easy connection to external components.

Case Connection: COLLECTOR

Simplifies circuit layout and connection of external components.

Nominal Transition Frequency (fT): 75 MHz

Suitable for high-frequency applications where fast switching is required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NZT749 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

65

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT749 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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