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NZT751

Onsemi

NZT751 by Onsemi

NZT751 by Onsemi is a PNP BJT transistor with 4 terminals, capable of handling up to 1.2W power dissipation and 60V collector-emitter voltage. It is ideal for switching applications due to its high transition frequency of 75MHz and max collector current of 4A. The package style is small outline, making it suitable for surface mount designs in various electronic devices.

Median Price

$0.626

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,470 parts In-Stock

1+ parts

-

100+ parts

$0.604

1k+ parts

$0.501

10k+ parts

$0.447

8,470

-

$0.604

$0.501

$0.447

DigiKey

USA . 8,470 parts In-Stock

1+ parts

-

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$0.750

10k+ parts

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8,470

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$0.750

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Verical

USA . 7,509 parts In-Stock

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$0.626

10k+ parts

$0.558

7,509

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$0.626

$0.558

Distributors (In-Stock)

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Digiode

USA . 1,418 parts In-Stock

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$0.470

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1,418

$0.470

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Vyrian

USA . 2,449 parts In-Stock

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$0.495

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2,449

$0.495

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Component Electronics Inc.

Canada . 22 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

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$0.500

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22

$0.770

$0.580

$0.500

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Flip Electronics

USA . 55,650 parts In-Stock

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55,650

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DigiKey Marketplace

USA . 8,790 parts In-Stock

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8,790

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R&J Components

USA . 5,172 parts In-Stock

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5,172

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PC Components Company LLC

USA . 5,007 parts In-Stock

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5,007

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Bristol Electronics

USA . 5,007 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,000 parts In-Stock

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Lantek

USA . 2,500 parts In-Stock

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2,500

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LWI Electronics Inc

India . 350 parts In-Stock

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350

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Anansix

USA . 326 parts In-Stock

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326

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Cyclops Electronics Ltd

UK . 256 parts In-Stock

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256

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Electronic Expediters

USA . 69 parts In-Stock

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Semi Source

USA . 48 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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5

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Distributors (Availability)

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Corphita

USA . 911 parts In-Stock

1+ parts

$0.446

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911

$0.446

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Corohmni

South Africa . 73 parts In-Stock

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$0.495

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73

$0.495

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Andel Nordic

Denmark . 489 parts In-Stock

1+ parts

$11.394

100+ parts

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$10.938

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$10.938

489

$11.394

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$10.938

$10.938

Perfect Parts

USA . 100,378 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 40,000 parts In-Stock

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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Lixinc

USA . 18,590 parts In-Stock

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Kulean Microsystems

USA . 7,420 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,283 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,495 parts In-Stock

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4,495

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SupplyDigital Components

Austria . 4,479 parts In-Stock

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Problanco Electronics

Mexico . 1,240 parts In-Stock

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UHIMA Technologies

Türkiye . 666 parts In-Stock

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666

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Supply Digital

USA . 649 parts In-Stock

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649

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Speed Components Ltd (Excess)

Israel . 186 parts In-Stock

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186

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Overview

Discover the power and efficiency of the NZT751 by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust that this PNP transistor offers exceptional performance and reliability. Ideal for a variety of electronic circuits, the NZT751 provides customers with value and benefits that enhance their projects. Upgrade your designs with the NZT751 and experience the advantages of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, ensuring reliability and long-term performance.

Polarity or Channel Type: PNP

Suitable for specific types of circuits and applications requiring PNP transistors.

Configuration: SINGLE

Simplified design and easy to integrate into circuits.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring efficient performance.

Surface Mount: YES

Allows for easy and secure mounting on the surface of a circuit board.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

Terminal Form: GULL WING

Provides mechanical strength and stability for secure soldering.

Maximum Power Dissipation (Abs): 1.2 W

Can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Compact and low-profile design for space-constrained applications.

Minimum DC Current Gain (hFE): 40

Provides consistent and reliable amplification of current.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 60 V

Handles high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

High-quality material known for its durability and efficiency in electronic components.

Maximum Collector Current (IC): 4 A

Capable of handling high current levels, suitable for demanding applications.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: DUAL

Allows for easy connection in various circuit configurations.

Case Connection: COLLECTOR

Clear identification of the collector terminal for easy integration into circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and heat management during assembly.

Peak Reflow Temperature °C: 260

Withstands high temperatures during soldering process without damage.

Nominal Transition Frequency (fT): 75 MHz

Capable of high-frequency operation, suitable for various signal processing applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NZT751 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT751 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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