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NZT753

Onsemi

NZT753 by Onsemi

NZT753 by Onsemi is a PNP BJT transistor with 4 terminals, capable of handling up to 1.2W power dissipation and 4A collector current. With a transition frequency of 75MHz, it's ideal for switching applications in electronics. Its small outline package and surface mount capability make it versatile for various designs.

Median Price

$0.864

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,979 parts In-Stock

1+ parts

$1.260

100+ parts

$0.583

1k+ parts

$0.409

10k+ parts

$0.333

3,979

$1.260

$0.583

$0.409

$0.333

DigiKey

USA . 6,350 parts In-Stock

1+ parts

$1.440

100+ parts

$0.604

1k+ parts

$0.430

10k+ parts

$0.340

6,350

$1.440

$0.604

$0.430

$0.340

Rochester

USA . 11,218 parts In-Stock

1+ parts

-

100+ parts

$0.452

1k+ parts

$0.375

10k+ parts

$0.334

11,218

-

$0.452

$0.375

$0.334

Verical

USA . 7,806 parts In-Stock

1+ parts

-

100+ parts

-

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$0.469

10k+ parts

$0.418

7,806

-

-

$0.469

$0.418

Flip Electronics (Authorized)

USA . 4,408 parts In-Stock

1+ parts

-

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4,408

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Distributors (In-Stock)

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Digiode

USA . 2,150 parts In-Stock

1+ parts

$0.352

100+ parts

-

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2,150

$0.352

-

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Vyrian

USA . 2,419 parts In-Stock

1+ parts

$0.371

100+ parts

-

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2,419

$0.371

-

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Classic Components Corporation

USA . 11,998 parts In-Stock

1+ parts

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11,998

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Flip Electronics

USA . 4,408 parts In-Stock

1+ parts

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4,408

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ACDS - Activité Composants Distribution Service

France . 2,921 parts In-Stock

1+ parts

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2,921

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Bristol Electronics

USA . 2,921 parts In-Stock

1+ parts

-

100+ parts

$0.375

1k+ parts

$0.280

10k+ parts

$0.260

2,921

-

$0.375

$0.280

$0.260

Dan-Mar Components

USA . 2,921 parts In-Stock

1+ parts

-

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2,921

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Distributors (Availability)

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Corphita

USA . 2,332 parts In-Stock

1+ parts

$0.334

100+ parts

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2,332

$0.334

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Component Stockers USA

USA . 12,228 parts In-Stock

1+ parts

$0.370

100+ parts

$0.350

1k+ parts

$0.380

10k+ parts

-

12,228

$0.370

$0.350

$0.380

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Corohmni

South Africa . 491 parts In-Stock

1+ parts

$0.371

100+ parts

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491

$0.371

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Kepictronics

USA . 306,000 parts In-Stock

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Perfect Parts

USA . 13,441 parts In-Stock

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13,441

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 5,128 parts In-Stock

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5,128

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Kulean Microsystems

USA . 2,275 parts In-Stock

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2,275

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Supply Digital

USA . 1,262 parts In-Stock

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1,262

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SupplyDigital Components

Austria . 667 parts In-Stock

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667

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UHIMA Technologies

Türkiye . 572 parts In-Stock

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572

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TANS Electronics

Latvia . 43 parts In-Stock

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43

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Overview

Elevate your power management capabilities with the Onsemi NZT753 PNP Power BJT transistor. Designed with precision and expertise by Onsemi, this small outline transistor offers unparalleled switching performance for a wide range of applications. With a maximum collector-emitter voltage of 100V and a peak reflow temperature of 260 °C, the NZT753 is a reliable and efficient choice for your electronic projects. Experience seamless operation and enhanced power efficiency with the NZT753 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, providing protection for the components inside.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

Simplifies circuit design and makes it easier to incorporate into a project.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Easy to integrate into modern PCB designs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Standard shape for easy handling and installation in various electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering onto the PCB, ensuring stable connections.

No. of Terminals: 4

Simplifies connection and helps in organizing the circuit layout.

Maximum Power Dissipation (Abs): 1.2 W

Ability to handle higher power dissipation, suitable for switching high loads.

Package Style (Meter): SMALL OUTLINE

Compact size allows for space-saving design and flexibility in placement.

Minimum DC Current Gain (hFE): 55

Sufficient DC gain for reliable transistor operation in switching applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliability in various environmental conditions.

Maximum Collector-Emitter Voltage: 100 V

Can handle higher voltages, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 4 A

Capable of handling higher current loads, suitable for power switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and component integrity during assembly processes.

Peak Reflow Temperature °C: 260

Compatible with standard reflow soldering processes for easy mass production.

Nominal Transition Frequency (fT): 75 MHz

Higher transition frequency enables faster switching speeds, improving overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NZT753 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

55

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT753 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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