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NSVUMC3NT1G

Onsemi

NSVUMC3NT1G by Onsemi

NSVUMC3NT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, VCEsat of 0.25V, and hFE of 35. It's used in AEC-Q101 applications, operates b/w -65 to 150°C, and has a max IC of 0.1A.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,957 parts In-Stock

1+ parts

$0.640

100+ parts

$0.541

1k+ parts

$0.260

10k+ parts

$0.118

2,957

$0.640

$0.541

$0.260

$0.118

DigiKey

USA . 72,000 parts In-Stock

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72,000

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Flip Electronics (Authorized)

USA . 72,000 parts In-Stock

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72,000

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Rochester

USA . 15,000 parts In-Stock

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$0.112

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$0.093

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$0.083

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$0.112

$0.093

$0.083

Verical

USA . 15,000 parts In-Stock

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$0.103

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$0.103

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Digiode

USA . 659 parts In-Stock

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$0.086

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659

$0.086

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Vyrian

USA . 1,411 parts In-Stock

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$0.090

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Flip Electronics

USA . 72,000 parts In-Stock

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Chip Stock

USA . 32,000 parts In-Stock

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32,000

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Distributors (Availability)

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Corphita

USA . 1,624 parts In-Stock

1+ parts

$0.082

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1,624

$0.082

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Corohmni

South Africa . 143 parts In-Stock

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$0.090

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143

$0.090

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Perfect Parts

USA . 30,946 parts In-Stock

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30,946

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Problanco Electronics

Mexico . 4,715 parts In-Stock

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TANS Electronics

Latvia . 4,504 parts In-Stock

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Kulean Microsystems

USA . 2,426 parts In-Stock

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SupplyDigital Components

Austria . 188 parts In-Stock

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UHIMA Technologies

Türkiye . 123 parts In-Stock

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Overview

Enhance your electronic projects with the NSVUMC3NT1G Small Signal Bipolar Junction Transistor by Onsemi. Manufactured using high-quality materials and advanced technology, this versatile component boasts NPN and PNP configurations in a compact package. Perfect for a wide range of applications, from amplifiers to switching circuits, this transistor offers low VCEsat and high DC current gain, ensuring optimal performance. Trust Onsemi for reliable components that deliver exceptional value and efficiency. Elevate your designs with the NSVUMC3NT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good mechanical strength and excellent electrical insulation, making the transistor package durable and reliable.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP types allows for versatile use in various circuit configurations and applications.

Maximum VCEsat: 0.25 V

Low VCEsat helps in reducing power dissipation and improving efficiency of the transistor, making it suitable for low-power applications.

Minimum DC Current Gain (hFE): 35

Higher DC current gain ensures better amplification capabilities and stability in the circuit, making it a reliable choice for signal amplification.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltages in the circuit without breakdown, offering greater flexibility in design.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVUMC3NT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVUMC3NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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