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NSVUMC2NT1G

Onsemi

NSVUMC2NT1G by Onsemi

NSVUMC2NT1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, VCEsat of 0.25V, and hFE of 60. Ideal for applications requiring low power dissipation, it operates b/w -65 to 150 °C with a max VCE of 50V. Its Gull Wing terminals make it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.088

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,905 parts In-Stock

1+ parts

$0.560

100+ parts

$0.220

1k+ parts

$0.148

10k+ parts

$0.118

2,905

$0.560

$0.220

$0.148

$0.118

Farnell

UK . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

12,000

-

-

-

$0.061

Element14

Singapore . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.137

12,000

-

-

-

$0.137

Chip1Stop

Japan . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

12,000

-

-

-

$0.092

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.082

3,000

-

-

-

$0.082

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.083

3,000

-

-

-

$0.083

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,860 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

-

10k+ parts

-

1,860

$0.082

-

-

-

Digiode

USA . 1,491 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

10k+ parts

-

1,491

$0.370

-

-

-

Chip Stock

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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54,000

-

-

-

-

Flip Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 383 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

-

10k+ parts

-

383

$0.082

-

-

-

Corphita

USA . 393 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

-

10k+ parts

-

393

$0.351

-

-

-

Continental Prestige Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.087

10k+ parts

$0.077

15,000

-

-

$0.087

$0.077

Glotronic Ltd.

UK . 9,600 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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9,600

-

-

-

-

TANS Electronics

Latvia . 6,637 parts In-Stock

1+ parts

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6,637

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Lixinc

USA . 5,062 parts In-Stock

1+ parts

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5,062

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Kulean Microsystems

USA . 3,928 parts In-Stock

1+ parts

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100+ parts

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3,928

-

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SupplyDigital Components

Austria . 3,026 parts In-Stock

1+ parts

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100+ parts

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3,026

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-

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

-

Problanco Electronics

Mexico . 1,886 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,886

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UHIMA Technologies

Türkiye . 218 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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218

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Overview

Discover the NSVUMC2NT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a renowned industry leader, this transistor is perfect for a variety of applications. Whether you're looking to enhance your electronics projects or streamline your manufacturing processes, this complex configuration transistor is sure to deliver. With its low VCEsat, small outline package style, and dual terminal position, the NSVUMC2NT1G provides unmatched value and efficiency. Upgrade your designs with the cutting-edge technology of Onsemi's NSVUMC2NT1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN AND PNP

Offers versatility for different circuit configurations or requirements.

Configuration: COMPLEX

Allows for advanced circuit designs and applications.

Surface Mount: YES

Facilitates easy and efficient PCB assembly.

Maximum VCEsat: 0.25 V

Low saturation voltage helps in minimizing power loss and improving efficiency.

Package Shape: RECTANGULAR

Optimal design for space-saving and efficient PCB layout.

Terminal Form: GULL WING

Enables easy handling and soldering during assembly.

No. of Elements: 2

Dual elements provide flexibility for various circuit configurations.

No. of Terminals: 5

Sufficient terminals for connections and integration into circuits.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power levels, suitable for many applications.

Package Style (Meter): SMALL OUTLINE

Compact package size ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 60

Consistent and reliable amplification capabilities.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 50 V

Can withstand relatively high voltage levels in circuits.

Transistor Element Material: SILICON

Provides high performance and reliability.

Minimum Operating Temperature: -65 °C

Ability to operate in low-temperature environments.

Maximum Collector Current (IC): 0.1 A

Adequate collector current rating for many small signal applications.

Terminal Finish: MATTE TIN

Provides good solderability and conductivity for terminals.

Terminal Position: DUAL

Dual terminal configuration for versatile connections.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper reflow soldering without damaging the transistor.

Peak Reflow Temperature °C: 260

Compatible with standard lead-free soldering processes.

Reference Standard: AEC-Q101

Conforms to automotive electronic component reliability standards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVUMC2NT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVUMC2NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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