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NLVHC4852ADTR2G

Onsemi

NLVHC4852ADTR2G by Onsemi

NLVHC4852ADTR2G by Onsemi is a CMOS differential multiplexer with 4 channels. It operates at temperatures from -55 to 125 °C and has a max supply voltage of 6 V. With a package style of small outline, thin profile, shrink pitch, it is suitable for military-grade applications requiring low on-state resistance and fast switching times.

Median Price

$0.594

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 60 parts In-Stock

1+ parts

-

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$0.594

1k+ parts

$0.493

10k+ parts

$0.440

60

-

$0.594

$0.493

$0.440

Distributors (In-Stock)

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Digiode

USA . 1,973 parts In-Stock

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$0.484

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$0.484

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Bristol Electronics

USA . 1,421 parts In-Stock

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$1.313

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$0.486

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$0.341

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1,421

$1.313

$0.486

$0.341

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Chip Stock

USA . 39,000 parts In-Stock

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Vyrian

USA . 11,520 parts In-Stock

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Microfarads

USA . 88 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,335 parts In-Stock

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$0.459

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$0.459

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Vigor

Singapore . 541 parts In-Stock

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$0.490

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541

$0.490

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Corohmni

South Africa . 430 parts In-Stock

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$0.510

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$0.510

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AZTECH Wire

Italy . 111 parts In-Stock

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$21.550

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Kepictronics

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,333 parts In-Stock

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SupplyDigital Components

Austria . 3,126 parts In-Stock

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Microchip USA

USA . 2,681 parts In-Stock

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Problanco Electronics

Mexico . 1,371 parts In-Stock

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UHIMA Technologies

Türkiye . 554 parts In-Stock

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Kulean Microsystems

USA . 333 parts In-Stock

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TANS Electronics

Latvia . 83 parts In-Stock

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Overview

Upgrade your electronic designs with the NLVHC4852ADTR2G by Onsemi - a high-quality differential multiplexer that offers unparalleled performance and reliability. With a military-grade temperature grade and advanced CMOS technology, this multiplexer ensures optimal functionality in even the most demanding environments. Perfect for a wide range of applications, including industrial, automotive, and aerospace, this versatile component delivers precision and efficiency like never before. Trust Onsemi's reputation for excellence and choose the NLVHC4852ADTR2G for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface-mountable allows for easy PCB assembly and space-saving in designs.

No. of Functions: 2

Having 2 functions in one component reduces the overall component count in a circuit, optimizing space and cost.

Nominal Supply Voltage (Vsup): 3 V

Operates at a standard supply voltage, suitable for many electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for industrial and harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

No. of Channels: 4

Having 4 channels provides flexibility in input/output configurations and makes it suitable for multitasking applications.

Technical Specifications

Multiplexers & Switches NLVHC4852ADTR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

4

No. of Functions:

2

No. of Terminals:

16

Nominal On-state Resistance Match:

160 ohm

Maximum On-state Resistance (Ron):

1100 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

300 ns

Maximum Switch-on Time:

300 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

NLVHC4852ADTR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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