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NLVHC4851ADTR2G

Onsemi

NLVHC4851ADTR2G by Onsemi

NLVHC4851ADTR2G by Onsemi is a CMOS differential multiplexer with 4 channels. It operates at temperatures from -55 to 125 °C and has a max supply voltage of 6 V. With a compact design, it is ideal for military-grade applications requiring low on-state resistance and fast switching times.

Median Price

$0.205

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 2,068 parts In-Stock

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$0.205

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$0.193

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$0.174

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Farnell

UK . 6,178 parts In-Stock

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Mouser Electronics

USA . 10 parts In-Stock

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$0.181

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Distributors (In-Stock)

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Digiode

USA . 1,167 parts In-Stock

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Bristol Electronics

USA . 295 parts In-Stock

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$0.525

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$0.168

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Cyclops Electronics Ltd

UK . 37,582 parts In-Stock

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Flip Electronics

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Chip Stock

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Martec Srl

Italy . 8,974 parts In-Stock

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Vyrian

USA . 7,982 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 3,030 parts In-Stock

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Greenchips

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Microfarads

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Corohmni

South Africa . 226 parts In-Stock

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$0.174

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Corphita

USA . 1,149 parts In-Stock

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$0.184

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Component Stockers USA

USA . 5,193 parts In-Stock

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Vigor

Singapore . 143 parts In-Stock

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Perfect Parts

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Kepictronics

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Infinite Electronics LLP (Excess)

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Component Connect

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Problanco Electronics

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TANS Electronics

Latvia . 7,075 parts In-Stock

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Kulean Microsystems

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Continental Prestige Electronics

USA . 1,696 parts In-Stock

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Formix International (Excess)

India . 1,485 parts In-Stock

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SupplyDigital Components

Austria . 1,257 parts In-Stock

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Microchip USA

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UHIMA Technologies

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Overview

Discover the cutting-edge NLVHC4851ADTR2G by Onsemi, a top-of-the-line multiplexer offering unparalleled quality and precision. With a focus on innovation and reliability, Onsemi has crafted this product to meet the demands of various applications in the industry. From its durable plastic/epoxy package body material to its enhanced functionality with 2 functions, this gem stands out from the rest. Elevate your projects with ease and efficiency, thanks to its dual power supplies and temperature range suitable for military-grade operations. Take advantage of its compact design and high performance to streamline your processes and achieve exceptional results. Choose Onsemi for superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer, ensuring long-term reliability.

No. of Functions: 2

Allows for multiple functions to be controlled or switched using a single device, reducing the need for additional components.

Nominal Supply Voltage (Vsup): 3 V

Operates efficiently at a commonly used voltage level, providing compatibility with a wide range of electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in industrial or harsh environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, improving overall performance.

Maximum Signal Current: 0.025 A

Capable of handling low current signals, making it suitable for use in various signal switching applications.

Technical Specifications

Multiplexers & Switches NLVHC4851ADTR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

4

No. of Functions:

2

No. of Terminals:

16

Nominal On-state Resistance Match:

160 ohm

Maximum On-state Resistance (Ron):

1100 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

300 ns

Maximum Switch-on Time:

300 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

NLVHC4851ADTR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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