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NLVHC4051ADWR2G

Onsemi

NLVHC4051ADWR2G by Onsemi

NLVHC4051ADWR2G by Onsemi is a CMOS multiplexer with 8 channels, 120 ohm on-state resistance, and 345 ns switch-on time. Ideal for military-grade applications requiring small outline packages and dual terminal positions. Operating temperature range from -55 to 125 °C with a max seated height of 2.65 mm.

Median Price

$0.394

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,354 parts In-Stock

1+ parts

$0.398

100+ parts

$0.374

1k+ parts

$0.338

10k+ parts

-

2,354

$0.398

$0.374

$0.338

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DigiKey

USA . 2,354 parts In-Stock

1+ parts

-

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$0.390

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2,354

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-

$0.390

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Distributors (In-Stock)

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Digiode

USA . 110 parts In-Stock

1+ parts

$0.378

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110

$0.378

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Vyrian

USA . 190 parts In-Stock

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$0.390

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190

$0.390

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DigiKey Marketplace

USA . 870 parts In-Stock

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$0.390

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870

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$0.390

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Distributors (Availability)

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Corphita

USA . 680 parts In-Stock

1+ parts

$0.358

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680

$0.358

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Vigor

Singapore . 250 parts In-Stock

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$0.360

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250

$0.360

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Corohmni

South Africa . 156 parts In-Stock

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$0.390

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156

$0.390

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Kulean Microsystems

USA . 3,928 parts In-Stock

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3,928

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TANS Electronics

Latvia . 3,673 parts In-Stock

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3,673

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Problanco Electronics

Mexico . 1,672 parts In-Stock

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1,672

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SupplyDigital Components

Austria . 808 parts In-Stock

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808

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UHIMA Technologies

Türkiye . 718 parts In-Stock

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718

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Overview

Elevate your electronics with the NLVHC4051ADWR2G by Onsemi, a top-tier manufacturer known for delivering quality components. This multiplexer stands out in the industry for its reliability and efficiency, making it an ideal choice for a wide range of applications. Whether you're working on consumer electronics or industrial equipment, this product offers unparalleled value with its high performance and durability. Upgrade your projects today with the NLVHC4051ADWR2G and experience the difference that Onsemi's expertise can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer, ensuring long-term reliability.

Nominal Supply Voltage (Vsup): 3 V

Designed to operate at a standard voltage level, making it compatible with most power supplies.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various environments and applications.

No. of Channels: 8

Provides multiple channels for switching signals, increasing flexibility and functionality.

Technology: CMOS

Utilizes CMOS technology for low power consumption and improved performance.

Technical Specifications

Multiplexers & Switches NLVHC4051ADWR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Additional Features:

ALSO OPERATES IN SINGLE SUPPLY VOLTAGE 2 TO 12V

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

3

Maximum Negative Supply Voltage (Vsup):

-6 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-4.5 V

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

40 dB

Nominal On-state Resistance Match:

12 ohm

Maximum On-state Resistance (Ron):

120 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6,GND/-6

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

220 ns

Maximum Switch-on Time:

345 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7.5 mm

Trade Compliance

NLVHC4051ADWR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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