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NLVHC4851ADR2G

Onsemi

NLVHC4851ADR2G by Onsemi

NLVHC4851ADR2G by Onsemi is a CMOS single-ended multiplexer with 8 channels. It operates at temperatures ranging from -55 to 125 °C and has a max supply voltage of 6 V. With a small outline package style, it is ideal for military-grade applications requiring low on-state resistance and fast switching times.

Median Price

$0.593

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 235,000 parts In-Stock

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Rochester

USA . 13,045 parts In-Stock

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-

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$0.593

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$0.492

10k+ parts

$0.439

13,045

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$0.593

$0.492

$0.439

Verical

USA . 10,705 parts In-Stock

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$0.615

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$0.548

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$0.615

$0.548

DigiKey

USA . 2,500 parts In-Stock

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$0.477

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$0.477

Distributors (In-Stock)

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Vyrian

USA . 1,304 parts In-Stock

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$0.376

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Digiode

USA . 1,860 parts In-Stock

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$0.462

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Flip Electronics

USA . 210,000 parts In-Stock

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Bristol Electronics

USA . 446 parts In-Stock

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$0.422

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$0.360

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446

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Contempo Components LLC

USA . 20 parts In-Stock

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Microfarads

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Corohmni

South Africa . 110 parts In-Stock

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$0.376

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Corphita

USA . 737 parts In-Stock

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$0.437

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737

$0.437

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Vigor

Singapore . 235 parts In-Stock

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$0.490

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Kepictronics

USA . 11,065 parts In-Stock

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SupplyDigital Components

Austria . 5,769 parts In-Stock

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Kulean Microsystems

USA . 3,287 parts In-Stock

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Problanco Electronics

Mexico . 3,146 parts In-Stock

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Formix International (Excess)

India . 2,500 parts In-Stock

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Continental Prestige Electronics

USA . 2,340 parts In-Stock

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$0.610

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TANS Electronics

Latvia . 1,821 parts In-Stock

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UHIMA Technologies

Türkiye . 854 parts In-Stock

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854

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Microchip USA

USA . 589 parts In-Stock

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Overview

Discover the Onsemi NLVHC4851ADR2G, a top-of-the-line multiplexer that combines quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers unparalleled performance and versatility. Ideal for a wide range of applications, this multiplexer is designed to deliver superior functionality while providing customers with unmatched value and benefits. Upgrade your system with the NLVHC4851ADR2G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving space and reducing production time.

Nominal Supply Voltage (Vsup): 3 V

Operates at a common and stable supply voltage, suitable for a wide range of electronic devices.

No. of Channels: 8

Offers multiple channels for connecting and controlling different signals or data streams simultaneously.

Technology: CMOS

The CMOS technology ensures low power consumption, high noise immunity, and compatibility with various digital systems.

Temperature Grade: MILITARY

Designed to operate efficiently and reliably in extreme temperature conditions, making it suitable for military or industrial applications.

Technical Specifications

Multiplexers & Switches NLVHC4851ADR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal On-state Resistance Match:

160 ohm

Maximum On-state Resistance (Ron):

1100 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

300 ns

Maximum Switch-on Time:

300 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

NLVHC4851ADR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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