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NLVHC4051AMNTWG

Onsemi

NLVHC4051AMNTWG by Onsemi

NLVHC4051AMNTWG by Onsemi is a CMOS single-ended multiplexer with 8 channels. It operates b/w -55 to 125 °C, with a max supply voltage of 6 V and on-state resistance of 120 ohm. Ideal for military-grade applications requiring fast switching times and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

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SupplyDigital Components

Austria . 8,138 parts In-Stock

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TANS Electronics

Latvia . 7,399 parts In-Stock

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Kulean Microsystems

USA . 945 parts In-Stock

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Problanco Electronics

Mexico . 833 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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UHIMA Technologies

Türkiye . 427 parts In-Stock

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Corphita

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Overview

Discover the NLVHC4051AMNTWG by Onsemi, a top-quality multiplexer and switch that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With its advanced technology and military-grade temperature grade, customers can trust in the durability and efficiency of this chip carrier. Experience seamless switching with minimal on-state resistance and fast switch-off times. Elevate your projects with the NLVHC4051AMNTWG and enjoy the benefits of superior quality and precision engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability of the product.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and reducing complexity.

Nominal Supply Voltage (Vsup): 4.5 V

Optimal supply voltage for efficient operation of the multiplexer.

No. of Channels: 8

Provides flexibility and versatility in signal routing.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed switching.

Temperature Grade: MILITARY

Designed to withstand extreme temperature conditions, suitable for military applications.

Maximum On-state Resistance (Ron): 120 ohm

Low resistance helps minimize signal loss and distortion.

Maximum Signal Current: 0.025 A

Capable of handling moderate signal currents for reliable performance.

Technical Specifications

Multiplexers & Switches NLVHC4051AMNTWG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Additional Features:

ALSO OPERATES WITH 2V TO 12V (VCC-VEE) SUPPLY

Other IC type:

JESD-30 Code:

R-PQCC-N16

Length:

3.5 mm

Maximum Negative Supply Voltage (Vsup):

-6 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-4.5 V

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

40 dB

Nominal On-state Resistance Match:

12 ohm

Maximum On-state Resistance (Ron):

120 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.1X.14,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1 mm

Maximum Signal Current:

.025 A

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Maximum Switch-off Time:

220 ns

Maximum Switch-on Time:

345 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

2.5 mm

Trade Compliance

NLVHC4051AMNTWG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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