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NLV74HCT4851ADR2G

Onsemi

NLV74HCT4851ADR2G by Onsemi

NLV74HCT4851ADR2G by Onsemi is a CMOS single-ended multiplexer with 8 channels, 750 ohm max on-state resistance, and 5V nominal voltage. It is used in military-grade applications due to its MIL temperature grade, small outline package style, and low max supply current of 0.04 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 1,048 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 8,390 parts In-Stock

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Kulean Microsystems

USA . 6,301 parts In-Stock

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Problanco Electronics

Mexico . 2,255 parts In-Stock

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TANS Electronics

Latvia . 1,150 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Overview

Enhance your electronic designs with the NLV74HCT4851ADR2G by Onsemi, a top-quality multiplexer & switch that delivers unparalleled performance and reliability. Onsemi is known for their cutting-edge technology and innovative solutions, making this product a standout in its category. Perfect for a wide range of applications, this versatile component offers customers exceptional value, benefits, and advantages. Upgrade your projects with ease and precision using the NLV74HCT4851ADR2G, a game-changer in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand various environmental conditions, making the product suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 5 V

Operates at a common supply voltage of 5V, compatible with most standard electronic systems.

No. of Channels: 8

With 8 channels, this multiplexer offers versatility and flexibility in routing signals, making it suitable for complex electronic systems.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, ideal for industrial applications where temperature fluctuations are common.

Technology: CMOS

Uses CMOS technology, which provides low power consumption and high noise immunity, enhancing the overall efficiency of the product.

Technical Specifications

Multiplexers & Switches NLV74HCT4851ADR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Maximum On-state Resistance (Ron):

750 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.04 mA

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NLV74HCT4851ADR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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