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NLV74HC4052ADR2G

Onsemi

NLV74HC4052ADR2G by Onsemi

NLV74HC4052ADR2G by Onsemi is a CMOS dual multiplexer with 4 channels. It operates at temperatures from -55 to 125 °C and has a max on-state resistance of 120 ohm. Ideal for military-grade applications requiring small outline packages and low supply current.

Median Price

$0.263

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2,484 parts In-Stock

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$0.490

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$0.267

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$0.227

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$0.490

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Rochester

USA . 2,978 parts In-Stock

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$0.253

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$0.210

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$0.187

2,978

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$0.253

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$0.187

Verical

USA . 2,137 parts In-Stock

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$0.263

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$0.263

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Digiode

USA . 1,118 parts In-Stock

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$0.198

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Vyrian

USA . 2,066 parts In-Stock

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Corphita

USA . 1,288 parts In-Stock

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$0.187

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Corohmni

South Africa . 266 parts In-Stock

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$0.208

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266

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Vigor

Singapore . 400 parts In-Stock

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$0.390

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400

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Microchip USA

USA . 4,628 parts In-Stock

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$1.597

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$1.597

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Infinite Electronics LLP (Excess)

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Problanco Electronics

Mexico . 5,313 parts In-Stock

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iodParts Technologies Inc.

India . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 3,529 parts In-Stock

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Kulean Microsystems

USA . 3,279 parts In-Stock

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Continental Prestige Electronics

USA . 2,978 parts In-Stock

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$0.249

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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Formix International (Excess)

India . 335 parts In-Stock

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TANS Electronics

Latvia . 248 parts In-Stock

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Overview

Discover the unparalleled performance of the NLV74HC4052ADR2G by Onsemi, a top-of-the-line multiplexer and switch that redefines reliability and efficiency in electronic applications. With Onsemi's reputation for quality craftsmanship, this product guarantees seamless functionality and precision engineering. From military-grade technology to its compact design, this versatile component ensures optimal performance in a variety of settings. Experience the innovation and value that Onsemi brings to the table with the NLV74HC4052ADR2G, where excellence meets affordability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

No. of Functions: 2

Offers versatility and flexibility in circuit design by providing multiple functions in a single component.

Nominal Supply Voltage (Vsup): 3 V

Compatible with common supply voltage requirements, making it easy to integrate into various systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, making it suitable for a wide range of operating conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing overall performance efficiency.

Technical Specifications

Multiplexers & Switches NLV74HC4052ADR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Additional Features:

ALSO OPERATES IN SINGLE SUPPLY VOLTAGE 2 TO 12V

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

Maximum Negative Supply Voltage (Vsup):

-6 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-4.5 V

No. of Channels:

4

No. of Functions:

2

No. of Terminals:

16

Nominal Off-state Isolation:

40 dB

Nominal On-state Resistance Match:

12 ohm

Maximum On-state Resistance (Ron):

120 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6,GND/-6

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

220 ns

Maximum Switch-on Time:

345 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

NLV74HC4052ADR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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