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NLV74HC4851AMNTWG

Onsemi

NLV74HC4851AMNTWG by Onsemi

NLV74HC4851AMNTWG by Onsemi is an 8-channel single-ended multiplexer with a max on-state resistance of 1100 ohm. It operates in a temperature range from -55 to 125 °C and has a terminal pitch of 0.5 mm. Ideal for military-grade applications requiring precise signal routing within tight space constraints.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,571 parts In-Stock

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AZTECH Wire

Italy . 843 parts In-Stock

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Problanco Electronics

Mexico . 7,347 parts In-Stock

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Kulean Microsystems

USA . 6,128 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,262 parts In-Stock

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UHIMA Technologies

Türkiye . 833 parts In-Stock

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Microchip USA

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TANS Electronics

Latvia . 508 parts In-Stock

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Corohmni

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Overview

Unlock limitless possibilities with the NLV74HC4851AMNTWG by Onsemi! This high-quality multiplexer & switch offers unparalleled performance and reliability, thanks to Onsemi's expertise in semiconductor manufacturing. Ideal for a wide range of applications, this versatile chip carrier with a very thin profile is designed to meet the needs of even the most demanding projects. Experience seamless operation and precise control with the NLV74HC4851AMNTWG while enjoying the peace of mind that comes with using top-notch technology. Elevate your designs with this innovative solution from Onsemi today!

Feature Benefit Bullets

Surface Mount: YES

Easy installation and suitable for automated assembly processes.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage level for efficient performance.

No. of Channels: 8

Provides multiple channels for signal routing and control.

Maximum Operating Temperature: 125 °C

Ensures stable operation even in high temperature environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Multiplexers & Switches NLV74HC4851AMNTWG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-XQCC-N16

JESD-609 Code:

e3

Length:

3.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal On-state Resistance Match:

160 ohm

Maximum On-state Resistance (Ron):

1100 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

300 ns

Maximum Switch-on Time:

300 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2.5 mm

Trade Compliance

NLV74HC4851AMNTWG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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