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NLU3G14MUTCG

Onsemi

NLU3G14MUTCG by Onsemi

NLU3G14MUTCG by Onsemi is a CMOS Logic Gate with 20.5 ns Propagation Delay, suitable for military applications. It operates at a Nominal Voltage of 3.3V and has a Load Capacitance of 50 pF, making it ideal for high-speed signal processing in harsh environments. The package style is Small Outline, Very Thin Profile with Surface Mount capability, offering compact design options for space-constrained projects.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,767 parts In-Stock

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Vyrian

USA . 1,675 parts In-Stock

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TANS Electronics

Latvia . 8,228 parts In-Stock

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SupplyDigital Components

Austria . 6,692 parts In-Stock

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Kulean Microsystems

USA . 4,309 parts In-Stock

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Problanco Electronics

Mexico . 3,278 parts In-Stock

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Corphita

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Corohmni

South Africa . 439 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 4 parts In-Stock

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Overview

Looking for high-quality logic gates that offer reliable performance? Look no further than the NLU3G14MUTCG by Onsemi. With a low propagation delay and versatile surface mount design, this product is perfect for a wide range of applications. Whether you're working on military-grade projects or commercial applications, this logic gate offers exceptional value with its efficient power supplies and Schmitt Trigger technology. Trust Onsemi for top-notch products that deliver unmatched performance every time.

Feature Benefit Bullets

Propagation Delay At Nominal Supply 20.5 ns

Low propagation delay ensures fast operation of the logic gates, making this product suitable for high-speed applications.

Surface Mount YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V) 3.3

Operates at a commonly used supply voltage of 3.3V, making it compatible with many existing systems and components.

Temperature Grade MILITARY

Designed to operate reliably in extreme temperature conditions, suitable for military or industrial applications where temperature fluctuations may occur.

Schmitt Trigger YES

Incorporation of Schmitt trigger ensures noise immunity and clean signal transitions, improving overall performance of the logic gates.

Technical Specifications

Logic Gates NLU3G14MUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

3G

JESD-30 Code:

R-XDSO-N8

JESD-609 Code:

e4

Length:

1.8 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.05,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

20.5 ns

Propagation Delay (tpd):

20.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

1.2 mm

Trade Compliance

NLU3G14MUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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