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NCV33064DM-5R2

Onsemi

NCV33064DM-5R2 by Onsemi

NCV33064DM-5R2 by Onsemi is a Power Management IC with 8 terminals, operating b/w -40 to 125 °C. It has a supply voltage range of 1-6.5V and is ideal for automotive applications due to its thin profile and small outline package style. The technology used is bipolar with a nominal threshold voltage of +4.6V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,811 parts In-Stock

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Digiode

USA . 516 parts In-Stock

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AZTECH Wire

Italy . 501 parts In-Stock

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SupplyDigital Components

Austria . 6,003 parts In-Stock

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TANS Electronics

Latvia . 4,974 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 2,431 parts In-Stock

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Kulean Microsystems

USA . 689 parts In-Stock

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Corphita

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Vigor

Singapore . 512 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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UHIMA Technologies

Türkiye . 406 parts In-Stock

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Microchip USA

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Overview

Enhance the performance of your power management systems with the NCV33064DM-5R2 by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in their Power Management ICs. This versatile product is perfect for a wide range of applications, providing customers with efficient power supply support circuitry. With its small outline, thin profile design, and automotive-grade temperature grade, the NCV33064DM-5R2 offers exceptional value, benefits, and advantages to meet all your power management needs. Switch to Onsemi for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, making it suitable for various environments and applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Nominal Supply Voltage (Vsup): 4 V

Provides a stable voltage supply for the IC to operate reliably within specified parameters.

Minimum Operating Temperature: -40 °C

Can withstand extreme cold temperatures, making it suitable for use in harsh environments.

Technology: BIPOLAR

Bipolar technology offers high reliability and performance, ensuring consistent operation of the power management IC.

Technical Specifications

Power Management ICs NCV33064DM-5R2 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

1/6.5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

6.5 V

Minimum Supply Voltage (Vsup):

1 V

Nominal Supply Voltage (Vsup):

4 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4.6V

Width (mm):

3 mm

Trade Compliance

NCV33064DM-5R2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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