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NCV303LSN22T1G

Onsemi

NCV303LSN22T1G by Onsemi

NCV303LSN22T1G by Onsemi is a Power Management IC with a Nominal Voltage of 1.5V, suitable for automotive applications. It features a Max Operating Temperature of 125 °C and Terminal Finish in Matte Tin, making it ideal for power supply support circuits. With a compact package style and surface mount capability, this IC offers versatile solutions for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 11,440 parts In-Stock

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USA . 11,440 parts In-Stock

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Digiode

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Vigor

Singapore . 246 parts In-Stock

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$0.330

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AZTECH Wire

Italy . 289 parts In-Stock

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Infinite Electronics LLP (Excess)

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TANS Electronics

Latvia . 6,463 parts In-Stock

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Kulean Microsystems

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Formix International (Excess)

India . 4,034 parts In-Stock

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SupplyDigital Components

Austria . 3,053 parts In-Stock

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Problanco Electronics

Mexico . 3,015 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 461 parts In-Stock

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Microchip USA

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Overview

Discover the NCV303LSN22T1G by Onsemi, a high-quality Power Management IC that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this IC is perfect for a wide range of applications. With a compact design and advanced technology, this IC delivers exceptional value, efficiency, and precision. Whether you need power supply support or voltage regulation, the NCV303LSN22T1G is the ideal solution for all your needs. Trust Onsemi to provide you with the best quality products that exceed your expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for the package, making it suitable for various applications.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V ensures stable and efficient power management for connected devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this power management IC can withstand demanding operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this power management IC energy-efficient and reliable.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this power management IC meets stringent requirements for temperature and performance in vehicle systems.

Technical Specifications

Power Management ICs NCV303LSN22T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.2V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.2V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCV303LSN22T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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