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NCP81161MNTWG

Onsemi

NCP81161MNTWG by Onsemi

NCP81161MNTWG by Onsemi is a MOSFET gate driver with 8 terminals, suitable for high side driving applications. It operates b/w -10 to 125 °C, with supply voltage range of 4.5-13.2V. This small outline driver has a peak reflow temp of 260°C and interface IC type as half bridge based MOSFET driver.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,667 parts In-Stock

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3,667

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Digiode

USA . 647 parts In-Stock

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647

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,285 parts In-Stock

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$17.500

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1,285

$17.500

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AZTECH Wire

Italy . 310 parts In-Stock

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$21.270

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310

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Kulean Microsystems

USA . 6,611 parts In-Stock

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SupplyDigital Components

Austria . 6,028 parts In-Stock

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6,028

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TANS Electronics

Latvia . 4,147 parts In-Stock

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Problanco Electronics

Mexico . 2,500 parts In-Stock

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2,500

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Corphita

USA . 1,323 parts In-Stock

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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495

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Microchip USA

USA . 277 parts In-Stock

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Corohmni

South Africa . 251 parts In-Stock

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Overview

Unleash the power of innovation with the NCP81161MNTWG MOSFET Gate Driver by Onsemi. Crafted with precision and expertise, this small outline, heat sink profile driver offers unmatched performance and reliability. Ideal for a wide range of applications, this cutting-edge technology delivers seamless integration and optimal efficiency. Elevate your projects with the superior quality and value that Onsemi products bring. Experience the difference with the NCP81161MNTWG and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers durability and reliability for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards.

Maximum Supply Voltage: 13.2 V

Suitable for applications requiring higher voltage inputs.

Package Shape: SQUARE

Square shape for convenient placement and space-saving on PCBs.

No. of Terminals: 8

Sufficient terminals for connecting various components in the circuit.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Compact design with heat sink/slug for efficient heat dissipation in confined spaces.

Minimum Supply Voltage: 4.5 V

Supports low voltage operation for power-efficient applications.

Maximum Operating Temperature: 125 °C

Capable of operating in high-temperature environments without degradation.

Minimum Operating Temperature: -10 °C

Wide temperature range allows for use in various environmental conditions.

Terminal Finish: TIN

TIN terminal finish for enhanced conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position for flexibility in circuit connection.

Maximum Seated Height: 1 mm

Low profile design fits in compact spaces and reduces overall height of the assembly.

Width: 2 mm

Narrow width for fitting in tight spaces on the PCB.

High Side Driver: YES

High side driver capability allows for driving power MOSFETs on the high side of the load.

Maximum Time At Peak Reflow Temperature (s): 30

Efficient reflow process with quick reflow time for mass production.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable solder joints during assembly.

Length: 2 mm

Compact length for space-saving integration on the PCB.

Terminal Form: NO LEAD

Lead-free terminal form for environmental compliance and RoHS compatibility.

Nominal Supply Voltage: 5 V

Standard supply voltage for compatibility with common power sources.

Terminal Pitch: 0.5 mm

Fine terminal pitch for precise connectivity and component placement.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge based MOSFET driver interface for efficient control of power MOSFETs in various applications.

Technical Specifications

MOSFET Gate Drivers NCP81161MNTWG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-10 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

NCP81161MNTWG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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