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NCP81158DMNTXG

Onsemi

NCP81158DMNTXG by Onsemi

NCP81158DMNTXG by Onsemi is a MOSFET gate driver with 2 functions, operating voltage range of 4.5V to 5.5V, and industrial temperature grade (-40 °C to 100°C). It features a small outline package with dual terminals and matte tin finish, suitable for high side driver applications in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 33,000 parts In-Stock

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Flip Electronics

USA . 33,000 parts In-Stock

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Vyrian

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Digiode

USA . 993 parts In-Stock

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Vigor

Singapore . 487 parts In-Stock

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$0.210

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Microchip USA

USA . 5,893 parts In-Stock

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$1.499

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AZTECH Wire

Italy . 347 parts In-Stock

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$16.920

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Problanco Electronics

Mexico . 7,974 parts In-Stock

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TANS Electronics

Latvia . 5,276 parts In-Stock

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Kulean Microsystems

USA . 4,223 parts In-Stock

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Kepictronics

USA . 3,488 parts In-Stock

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Corphita

USA . 766 parts In-Stock

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UHIMA Technologies

Türkiye . 498 parts In-Stock

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Corohmni

South Africa . 468 parts In-Stock

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SupplyDigital Components

Austria . 425 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the NCP81158DMNTXG MOSFET Gate Driver by Onsemi. As a leader in semiconductor manufacturing, Onsemi delivers cutting-edge solutions for a wide range of applications. This high-quality driver offers two functions in a compact package, making it ideal for industrial settings where space is limited. With a maximum supply voltage of 5.5V and a temperature grade of industrial, this driver ensures optimal performance even in harsh conditions. Experience the value and benefits of Onsemi's NCP81158DMNTXG - the ultimate choice for your gate driver needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation properties and can withstand high temperatures, making the product durable and reliable.

Surface Mount: YES

Surface mount capability allows for easy and secure installation in a variety of applications, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

High maximum supply voltage capability ensures compatibility with a wide range of systems and power sources.

No. of Functions: 2

Having 2 functions in a single package increases versatility and functionality, offering more options for driving MOSFETs.

Package Shape: SQUARE

Square package shape provides a compact and efficient design, making it easier to integrate into tight spaces or crowded PCB layouts.

No. of Terminals: 8

8 terminals allow for more connection options and flexibility in circuit design, enabling customization and optimization of the driver's performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable and long-lasting connections.

Maximum Seated Height: 1 mm

Low maximum seated height minimizes the overall profile of the driver, allowing for compact and space-saving designs.

High Side Driver: YES

High side driver capability allows for efficient control and driving of MOSFETs in high voltage applications, enhancing performance and reliability.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in a wide range of temperature environments, making the driver suitable for industrial applications.

Technical Specifications

MOSFET Gate Drivers NCP81158DMNTXG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

NCP81158DMNTXG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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