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NCP6335AFCCT1G

Onsemi

NCP6335AFCCT1G by Onsemi

NCP6335AFCCT1G by Onsemi is a Power Management IC with 20 terminals, Vsup range of 2.3V to 5.5V, and adjustable threshold. It has a very thin profile package style suitable for industrial applications requiring supply voltage regulation in the temperature range of -40 °C to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,038 parts In-Stock

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Vyrian

USA . 89 parts In-Stock

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89

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Problanco Electronics

Mexico . 6,463 parts In-Stock

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6,463

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Kulean Microsystems

USA . 3,579 parts In-Stock

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3,579

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TANS Electronics

Latvia . 2,242 parts In-Stock

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Corphita

USA . 1,694 parts In-Stock

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SupplyDigital Components

Austria . 1,450 parts In-Stock

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1,450

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Corohmni

South Africa . 173 parts In-Stock

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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Overview

Enhance your power management solutions with the NCP6335AFCCT1G by Onsemi. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for industrial applications, this product ensures optimal performance even in extreme temperatures. With a compact design and adjustable threshold feature, the NCP6335AFCCT1G delivers exceptional value and efficiency to customers. Trust Onsemi for cutting-edge technology that empowers your projects to reach new heights of success. Elevate your power management capabilities today with the NCP6335AFCCT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the power management IC.

Surface Mount: YES

Being surface mountable makes it easier to integrate this power management IC into various electronic devices.

Nominal Supply Voltage (Vsup): 3.6 V

The nominal supply voltage of 3.6V makes this power management IC compatible with a wide range of applications.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array, very thin profile, and fine pitch package style allows for compact design and efficient use of space in electronic devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this power management IC can withstand high temperature environments.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C makes this power management IC suitable for a wide range of environments.

Adjustable Threshold: YES

The adjustable threshold feature allows for customizable settings based on the specific requirements of the application.

Technical Specifications

Power Management ICs NCP6335AFCCT1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B20

Length:

2.02 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.62 mm

Trade Compliance

NCP6335AFCCT1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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