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NCP6336FCCT1G

Onsemi

NCP6336FCCT1G by Onsemi

NCP6336FCCT1G by Onsemi is a Power Management IC with 20 terminals, Vsup range of 2.3V to 5.5V, and operating temperature from -40 °C to 85°C. It features adjustable threshold and is suitable for industrial applications requiring power supply support circuits in a compact GRID ARRAY package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,410 parts In-Stock

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Netsource Technology, Inc.

USA . 1,124 parts In-Stock

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Vyrian

USA . 913 parts In-Stock

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SupplyDigital Components

Austria . 7,878 parts In-Stock

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Problanco Electronics

Mexico . 7,214 parts In-Stock

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TANS Electronics

Latvia . 6,155 parts In-Stock

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Corphita

USA . 547 parts In-Stock

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Corohmni

South Africa . 421 parts In-Stock

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Microchip USA

USA . 229 parts In-Stock

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UHIMA Technologies

Türkiye . 212 parts In-Stock

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Vigor

Singapore . 210 parts In-Stock

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Kulean Microsystems

USA . 138 parts In-Stock

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Overview

Enhance your power management solutions with the NCP6336FCCT1G by Onsemi. Crafted with precision and expertise, Onsemi's Power Management ICs offer unparalleled quality and reliability. This cutting-edge product boasts a wide range of applications, providing customers with optimal performance and efficiency. Say goodbye to frequent replacements and hello to seamless operations with the NCP6336FCCT1G. Trust in Onsemi's reputation for excellence and innovation, and experience the difference in power management technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable and rugged applications.

Surface Mount: YES

Being surface mountable saves space on the PCB and simplifies the assembly process, making it a convenient choice for compact designs.

Nominal Supply Voltage (Vsup): 3.6 V

The nominal supply voltage of 3.6 V provides a balanced power input for various applications without the need for additional voltage regulation.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures the product can withstand harsh environmental conditions and maintain reliable performance.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, the product can operate effectively in extreme cold environments without performance degradation.

Width (mm): 1.62 mm

The slim width of 1.62 mm enables the product to be integrated into space-constrained designs without compromising functionality.

No. of Channels: 2

Having 2 channels allows the product to manage multiple power sources or outputs simultaneously, providing greater flexibility and efficiency.

Adjustable Threshold: YES

The ability to adjust the threshold ensures customizable power management settings to meet specific application requirements, enhancing the product's usability.

Technical Specifications

Power Management ICs NCP6336FCCT1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B20

Length:

2.02 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.62 mm

Trade Compliance

NCP6336FCCT1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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