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NCP6335ADFCCT1G

Onsemi

NCP6335ADFCCT1G by Onsemi

NCP6335ADFCCT1G by Onsemi is a Power Management IC with 20 terminals, operating b/w -40 to 85 °C. It has a supply voltage range of 2.3V to 5.5V and adjustable threshold feature. This IC is ideal for industrial applications requiring precise power supply support circuits in compact form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,552 parts In-Stock

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Vyrian

USA . 1,490 parts In-Stock

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1,490

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SupplyDigital Components

Austria . 7,029 parts In-Stock

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Problanco Electronics

Mexico . 6,755 parts In-Stock

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Kulean Microsystems

USA . 2,597 parts In-Stock

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Corphita

USA . 828 parts In-Stock

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UHIMA Technologies

Türkiye . 708 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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TANS Electronics

Latvia . 38 parts In-Stock

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Overview

Unlock the power of your devices with the NCP6335ADFCCT1G from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability. This Power Management IC is a game-changer, providing precision performance and efficiency for a wide range of applications. Say goodbye to power supply issues and hello to seamless operation with this cutting-edge product. Trust in Onsemi to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the Power Management ICs easy to handle and affordable.

Surface Mount: YES

Being surface mountable enables easy and efficient installation of the Power Management ICs onto circuit boards.

Nominal Supply Voltage (Vsup): 3.6 V

This voltage is suitable for a wide range of electronic devices, providing reliable power supply.

No. of Terminals: 20

Having a higher number of terminals allows for more connectivity options and flexibility in circuit design.

Maximum Operating Temperature: 85 °C

The high operating temperature ensures that the Power Management ICs can withstand harsh environmental conditions and maintain stability.

Minimum Operating Temperature: -40 °C

The low operating temperature capability makes the Power Management ICs suitable for use in extreme cold conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure connections within the circuit layout.

Maximum Seated Height: 0.6 mm

The low seated height allows for compact and space-saving installations of the Power Management ICs.

Adjustable Threshold: YES

The ability to adjust the threshold makes these Power Management ICs versatile and adaptable to different voltage requirements.

Technical Specifications

Power Management ICs NCP6335ADFCCT1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B20

Length:

2.02 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.62 mm

Trade Compliance

NCP6335ADFCCT1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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