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NCP5351D

Onsemi

NCP5351D by Onsemi

NCP5351D by Onsemi is a MOSFET Gate Driver with 5V power supply, 8 terminals, and 4A output peak current limit. It features high side driver, 0.08us turn-on time, and 0.037us turn-off time. Ideal for applications requiring precise control of MOSFETs in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,802 parts In-Stock

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Digiode

USA . 179 parts In-Stock

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Advanced Electronics

New Zealand . 821 parts In-Stock

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$3.827

100+ parts

$3.483

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$3.138

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821

$3.827

$3.483

$3.138

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AZTECH Wire

Italy . 955 parts In-Stock

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$19.370

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QUARKTWIN TECHNOLOGY LTD

USA . 29,122 parts In-Stock

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Kulean Microsystems

USA . 7,321 parts In-Stock

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Problanco Electronics

Mexico . 6,417 parts In-Stock

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SupplyDigital Components

Austria . 6,269 parts In-Stock

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TANS Electronics

Latvia . 4,499 parts In-Stock

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Microchip USA

USA . 3,932 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Corphita

USA . 2,482 parts In-Stock

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Vigor

Singapore . 475 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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Overview

Enhance the performance of your power supply designs with the NCP5351D MOSFET Gate Driver from Onsemi. With a compact design and high-side driver capability, this versatile component offers superior quality and reliability. Ideal for a wide range of applications, this product provides customers with increased efficiency, faster response times, and precise control over their power systems. Trust Onsemi for innovative solutions that deliver value and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the product long-lasting and reliable.

Surface Mount: YES

Surface Mount packaging allows for easy installation and saves space on the PCB.

Power Supplies (V): 5

Operates at a standard power supply voltage of 5V, making it compatible with a wide range of systems.

No. of Terminals: 8

Having 8 terminals provides flexibility in connections and allows for various configurations.

Width: 3.9 mm

Compact width of 3.9mm saves space on the PCB and allows for dense packing.

Maximum Seated Height: 1.75 mm

Low seated height of 1.75mm helps in fitting the product in compact spaces.

High Side Driver: YES

High side driver functionality enables driving power MOSFETs on the high side, enhancing control and efficiency in the circuit.

Nominal Output Peak Current Limit: 4 A

High peak current limit of 4A ensures the device can handle high loads and power requirements.

Technical Specifications

MOSFET Gate Drivers NCP5351D attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Nominal Output Peak Current Limit:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.037 us

Turn-on Time:

.08 us

Width:

3.9 mm

Trade Compliance

NCP5351D Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-665-1471, 5962016651471

NIIN

016651471

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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