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NC7SZ18FHX-L22175

Onsemi

NC7SZ18FHX-L22175 by Onsemi

The Onsemi NC7SZ18FHX-L22175 is a CMOS Decoder & Driver with 10.5 ns propagation delay, 32 Amp max I (ol), and 1.8V nominal voltage. Ideal for industrial applications requiring fast signal processing in compact spaces due to its small outline and very thin profile package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,941 parts In-Stock

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Digiode

USA . 2,086 parts In-Stock

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2,086

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Microchip USA

USA . 6,444 parts In-Stock

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$0.662

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$0.662

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AZTECH Wire

Italy . 203 parts In-Stock

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$19.850

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203

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QUARKTWIN TECHNOLOGY LTD

USA . 16,526 parts In-Stock

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Kulean Microsystems

USA . 7,086 parts In-Stock

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7,086

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Problanco Electronics

Mexico . 4,523 parts In-Stock

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SupplyDigital Components

Austria . 2,528 parts In-Stock

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TANS Electronics

Latvia . 1,616 parts In-Stock

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Corphita

USA . 1,197 parts In-Stock

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UHIMA Technologies

Türkiye . 984 parts In-Stock

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Corohmni

South Africa . 270 parts In-Stock

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Overview

Elevate your decoding and driving capabilities with the NC7SZ18FHX-L22175 by Onsemi. This high-quality product offers fast propagation delay, a wide operating temperature range, and a compact design for seamless integration into your applications. With Onsemi's reputation for reliability and innovation, you can trust that this decoder and driver will deliver superior performance. Take your projects to the next level with the NC7SZ18FHX-L22175 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications that require a compact and robust decoder & driver.

Propagation Delay At Nominal Supply: 10.5 ns

The low propagation delay ensures fast response times, making this decoder & driver suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during installation.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage makes this product energy-efficient and suitable for low-power applications.

Output Characteristics: 3-STATE

The 3-state output allows for flexibility in controlling the output signal, making it versatile for various applications.

Technology: CMOS

The CMOS technology used in this decoder & driver ensures high noise immunity and low power consumption, making it reliable and efficient.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, increasing its durability and reliability.

Technical Specifications

Decoder & Drivers NC7SZ18FHX-L22175 attributes and parameters. Explore more Decoder & Drivers devices from Onsemi

Specs

Family:

LVC/LCX/Z

Input Conditioning:

STANDARD

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay At Nominal Supply:

10.5 ns

Propagation Delay (tpd):

10.5 ns

Qualification:

Not Qualified

Maximum Seated Height:

.55 mm

Sub-Category:

Decoder/Drivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7SZ18FHX-L22175 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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