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NC7NZ34L8X

Onsemi

NC7NZ34L8X by Onsemi

The Onsemi NC7NZ34L8X is a logic gate with 3 functions and 5.1ns propagation delay at 1.8V, suitable for industrial applications. With a max operating temperature of 85°C and surface mount capability, it offers fast performance in compact chip carrier packaging. Operating b/w -40°C to 85°C, this CMOS technology device has a terminal pitch of 0.5mm and can handle up to 24A current output.

Median Price

$0.167

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 158 parts In-Stock

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$0.126

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$0.118

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DigiKey

USA . 40 parts In-Stock

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$0.300

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$0.134

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$0.120

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Arrow

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Verical

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Chip1Stop

Japan . 4 parts In-Stock

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Digiode

USA . 1,769 parts In-Stock

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Bristol Electronics

USA . 2,382 parts In-Stock

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Flip Electronics

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NAC Semi

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Semi Source

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ACDS - Activité Composants Distribution Service

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Sea View Technologies

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Vyrian

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Corel Iberica Componentes, S.L.

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Nova Conductors

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Speed Components Ltd

Israel . 102 parts In-Stock

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Prism Electronics

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Semtec, LLC

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Ampacity Inc.

Singapore . 1,899 parts In-Stock

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$0.107

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Corphita

USA . 2,325 parts In-Stock

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Component Stockers USA

USA . 1,110 parts In-Stock

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Corohmni

South Africa . 294 parts In-Stock

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Aztec Data Supply Inc.

USA . 116 parts In-Stock

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$28.551

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RC Electronics

USA . 61,294 parts In-Stock

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$0.240

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Metaverse IC Inc.

Canada . 56,820 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Authorized Procurement Solutions

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Lixinc

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Continental Prestige Electronics

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iodParts Technologies Inc.

India . 4,995 parts In-Stock

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Microchip USA

USA . 4,783 parts In-Stock

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Speed Components Ltd (Excess)

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Kulean Microsystems

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SupplyDigital Components

Austria . 2,627 parts In-Stock

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Argo Parts USA

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Türkiye . 712 parts In-Stock

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Overview

Experience the unmatched quality and precision of Onsemi's NC7NZ34L8X Logic Gates. With a lightning-fast propagation delay of 5.1 ns, this product offers unparalleled performance for your electronic projects. Suitable for a wide range of applications, from industrial automation to consumer electronics, the NC7NZ34L8X guarantees reliability and efficiency. Trust in Onsemi's reputation for excellence and elevate your designs with the innovative features and cutting-edge technology of this logic gate. Elevate your projects to the next level with Onsemi's NC7NZ34L8X Logic Gates.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 5.1 ns

This low propagation delay makes this logic gate ideal for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy integration into compact electronic designs.

No. of Functions: 3

With multiple functions in one package, this logic gate provides versatility and efficiency.

Package Shape: SQUARE

The square package shape makes it easy to place and secure in circuit layouts.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage requirement helps in reducing power consumption.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures compatibility with various circuit configurations.

Power Supplies (V): 3.3

Operating at 3.3V makes it suitable for a wide range of electronic systems.

No. of Terminals: 8

The number of terminals provides ample connection options for complex circuit setups.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers durability and ease of handling.

Maximum I (ol): 24 Amp

With a high maximum output current, this logic gate can drive multiple loads effectively.

Propagation Delay (tpd): 8.8 ns

The specified propagation delay ensures reliable signal processing in time-sensitive applications.

Maximum Operating Temperature: 85 °C

Operating up to 85°C makes this logic gate suitable for industrial environments.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows for reliable performance in extreme conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: QUAD

The quad terminal positioning aids in efficient routing and connection of signals.

Maximum Seated Height: 0.55 mm

With a low seated height, this logic gate is suitable for compact device designs.

Width: 1.6 mm

The specified width allows for easy placement in tight circuit layouts.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage requirement helps in reducing overall power consumption.

Maximum Time At Peak Reflow Temperature (s): 30

The specified reflow time ensures proper soldering without damaging the device.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures robust soldering during assembly.

Length: 1.6 mm

The specified length provides a compact footprint for space-constrained applications.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures reliable performance in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Terminal Form: NO LEAD

The no-lead terminal form provides environmental benefits and ease of disposal.

Packing Method: TR

The specified packing method ensures secure storage and transportation of the logic gate.

Terminal Pitch: 0.5 mm

With a small terminal pitch, this logic gate allows for dense circuit layouts.

Maximum Supply Voltage (Vsup): 5.5 V

Operating at a maximum supply voltage of 5.5V ensures compatibility with a wide range of electronic systems.

Technical Specifications

Logic Gates NC7NZ34L8X attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-XQCC-N8

JESD-609 Code:

e4

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC8,.06SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.1 ns

Propagation Delay (tpd):

8.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

NC7NZ34L8X Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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