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NB2309AI1HDT

Onsemi

NB2309AI1HDT by Onsemi

NB2309AI1HDT clock driver by Onsemi is a CMOS technology device with 16 terminals and a supply voltage of 3.3V. It operates in industrial temperature range (-40 to 85 °C) and offers 8 true outputs with a max frequency of 133.33 MHz, making it suitable for various applications requiring precise timing control.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,238 parts In-Stock

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Digiode

USA . 1,553 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 990 parts In-Stock

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$20.220

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990

$20.220

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Microchip USA

USA . 10,711 parts In-Stock

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Problanco Electronics

Mexico . 7,719 parts In-Stock

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SupplyDigital Components

Austria . 5,723 parts In-Stock

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Kulean Microsystems

USA . 3,051 parts In-Stock

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3,051

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TANS Electronics

Latvia . 2,055 parts In-Stock

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Corphita

USA . 1,878 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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UHIMA Technologies

Türkiye . 105 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the NB2309AI1HDT clock driver & buffer by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers high-quality products that stand out in the market. Ideal for a wide range of applications, this product offers reliable performance and precision timing, ensuring smooth operation for your devices. Experience the value and benefits of Onsemi's clock drivers & buffers with the NB2309AI1HDT, where quality meets innovation for unmatched customer satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, which is ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Input Conditioning: STANDARD

Standard input conditioning ensures compatibility with a wide range of applications, making the product versatile and easy to integrate into different systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V makes the product suitable for a variety of electronic devices while providing a balance between power efficiency and performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the product can withstand harsh environmental conditions, ensuring reliability in industrial applications.

Technical Specifications

Clock Drivers & Buffers NB2309AI1HDT attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

2309

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Logic IC Type:

Maximum I (ol):

12 Amp

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

16

No. of True Outputs:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.25 ns

Maximum Seated Height:

1.2 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Minimum fmax:

133.33 MHz

Trade Compliance

NB2309AI1HDT Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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