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MURA230T3

Onsemi

MURA230T3 by Onsemi

MURA230T3 by Onsemi is a single rectifier diode with a max output current of 2A and peak repetitive reverse voltage of 300V. It features a fast recovery time of 0.065us, making it ideal for high voltage power applications. The diode is designed for surface mount installation in small outline packages, with an operating temperature up to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 11,128 parts In-Stock

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Chip Stock

USA . 10,629 parts In-Stock

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Digiode

USA . 949 parts In-Stock

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949

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AZTECH Wire

Italy . 1,113 parts In-Stock

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$12.900

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Kepictronics

USA . 5,379 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 3,598 parts In-Stock

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SupplyDigital Components

Austria . 3,438 parts In-Stock

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Problanco Electronics

Mexico . 2,281 parts In-Stock

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TANS Electronics

Latvia . 2,198 parts In-Stock

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Corphita

USA . 761 parts In-Stock

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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Overview

Unleash the power of high voltage ultra-fast recovery with the MURA230T3 by Onsemi. This top-notch diode rectifier offers unparalleled quality and reliability, thanks to its manufacturer's reputation for excellence. Ideal for a wide range of applications, this single-config package delivers efficient performance with a maximum output current of 2A and a maximum repetitive peak reverse voltage of 300V. Say goodbye to slow recovery times and hello to superior power management with the MURA230T3 – the perfect choice for those seeking value, benefits, and advantages in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Config: SINGLE

Simplified design with single configuration makes it easy to use in various applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Reverse Recovery Time: 0.065 us

Ultra-fast recovery time ensures efficient and responsive performance.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to place and secure in different setups.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Ideal for high voltage applications requiring fast recovery power.

Maximum Operating Temperature: 175 °C

Can operate efficiently in high temperature environments.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability.

Maximum Forward Voltage (VF): 1.05 V

Low forward voltage drop for efficient power conversion.

Maximum Output Current: 2 A

Can handle high output currents for various applications.

Maximum Repetitive Peak Reverse Voltage: 300 V

Can withstand high reverse voltages repeatedly.

Diode Element Material: SILICON

Silicon material provides good electrical properties and reliability.

Technical Specifications

Diodes & Rectifiers MURA230T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA230T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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